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M. Sarret
Observed names:
M Sarret,
M. SARRET,
Michel Sarret,
Sarret, Michel
Observed institutions:
Centre National de la Recherche Scientifique,
Institut d'Électronique et des Technologies du numéRique,
Université Rennes 1,
Université de Rennes
OpenAlex ID:
A5057013615
Effect of crystallographic directions on porous silicon formation on patterned substrates
2000
·
M Guendouz
, P Joubert
, et al.
·
Materials Science and Engineering B
·
42
Effect of grain boundaries on the formation of luminescent porous silicon from polycrystalline silicon films
1994
·
P. Guyader
, P. Joubert
, et al.
·
Applied Physics Letters
·
32
Cw argon laser crystallization of silicon films: Structural properties
2006
·
J.F. Michaud
, R. Rogel
, et al.
·
Journal of Non-Crystalline Solids
·
24
From amorphous to polycrystalline thin films: dependence on annealing time of structural and electronic properties
1998
·
T. Mohammed-Brahim
, K. Kis-Sion
, et al.
·
Journal of Non-Crystalline Solids
·
20
In situdoping of silicon deposited by LPCVD: pressure influence on dopant incorporation mechanisms
1999
·
D Briand
, M Sarret
, et al.
·
Semiconductor Science and Technology
·
18
PDF
Effect of the starting amorphous structure on the solid-phase crystallization of silicon
1997
·
T. Mohammed-brahim
, M. Sarret
, et al.
·
Philosophical Magazine B
·
16
Pressure dependence of i n s i t u boron-doped silicon films prepared by low-pressure chemical vapor deposition. I. Microstructure
1989
·
P. Joubert
, M. Sarret
, et al.
·
Journal of Applied Physics
·
16
Polysiliconin situphosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process
1995
·
D. Briand
, M. Sarret
, et al.
·
Materials Science and Technology
·
14
n-type polycrystalline silicon films obtained by crystallization of in situ phosphorus-doped amorphous silicon films deposited at low pressure
1994
·
M. Sarret
, A. Liba
, et al.
·
Journal of Applied Physics
·
14
Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
2000
·
K Mourgues
, A Rahal
, et al.
·
Journal of Non-Crystalline Solids
·
12
Low-pressure chemical vapor deposition of low in situ phosphorus doped silicon thin films
1991
·
M. Sarret
, A. Liba
, et al.
·
Applied Physics Letters
·
11
High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon
2000
·
R Rogel
, M Sarret
, et al.
·
Journal of Non-Crystalline Solids
·
9
Solid phase post-treatment of polysilicon films by a continuous argon laser
2005
·
J.F. Michaud
, R. Rogel
, et al.
·
Thin Solid Films
·
8
Novel ITO alloy for microwave and optical applications
2005
·
M. Bourry
, M. Sarret
, et al.
·
IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)
·
8
Polycrystalline silicon deposited on glass by subatmospheric-pressure chemical vapour deposition at a high rate
2002
·
Peter Münster
, Michel Sarret
, et al.
·
Philosophical Magazine B
·
8
Pressure dependence of i n s i t u boron-doped silicon films prepared by low-pressure chemical vapor deposition. II. Resistivity
1989
·
L. Haji
, L. Hamedi
, et al.
·
Journal of Applied Physics
·
7
Influence of precursors gases on LPCVD TFT's characteristics
2003
·
R. Rogel
, G. Gautier
, et al.
·
Thin Solid Films
·
6
Single shot excimer laser crystallization of silicon films deposited by LPCVD
1997
·
K. Kis-Sion
, T. Mohammed-Brahim
, et al.
·
Thin Solid Films
·
6
Polycrystalline Silicon Characteristics Dependence on Starting Amorphous Material
1995
·
T. Mohammed-Brahim
, M. Sarret
, et al.
·
Journal de Physique IV (Proceedings)
·
5
Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers
1995
·
D. Briand
, M. Sarret
, et al.
·
Journal de Physique IV (Proceedings)
·
5
Porous silicon ammonia gas sensor
2006
·
A. Chaillou
, J. Charrier
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
3
In-situ phosphorous-doped VLPCVD polysilicon layers for polysilicon thin-film transistors
1994
·
M. Sarret
, A. Liba
, et al.
·
IEE Proceedings - Circuits Devices and Systems
·
3
Crystallization of amorphous silicon–germanium films deposited by low pressure chemical vapor deposition
2000
·
D Guillet
, M Sarret
, et al.
·
Journal of Non-Crystalline Solids
·
2
Hot-Wire Hydrogen Passivation of Polycrystalline Silicon TFT's
1997
·
N. Beldi
, F. Le Bihan
, et al.
·
MRS Proceedings
·
2
Two mask step polysilicon TFT technology for flat panel displays
1988
·
B. Loisel
, L. Haji
, et al.
·
Electronics Letters
·
2
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Works count:
43
Citation count:
299
H-index:
11
I10-index:
11
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