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Uta Juda

Observed names: Juda, Uta, Juda, Uta 1961-, U Juda, U. Juda
ORCID: 0009-0007-0445-9504
Observed ORCID: 0009-0007-0445-9504
OpenAlex ID: A5058332001
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
2020 · Zbigniew Galazka, Steffen Ganschow, et al. · Progress in Crystal Growth and Characterization of Materials · 79
Melt growth and properties of bulk BaSnO 3 single crystals
2016 · Z Galazka, R Uecker, et al. · Journal of Physics Condensed Matter · 44
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Technology development of high purity germanium crystals for radiation detectors
2019 · N. Abrosimov, M. Czupalla, et al. · Journal of Crystal Growth · 35
Bulk Single Crystals and Physical Properties of Rutile GeO2 for High‐Power Electronics and Deep‐Ultraviolet Optoelectronics
2024 · Zbigniew Galazka, Roberts Blukis, et al. · physica status solidi (b) · 33
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SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen
2012 · Carsten Hartmann, Martin Albrecht, et al. · Journal of Crystal Growth · 30
EPR spectroscopy of platinum-hydrogen complexes in silcon
1994 · M. Höhne, U. Juda, et al. · Physical review. B, Condensed matter · 29
Microstructural investigations of SrTiO3single crystals and polysilicon using a powerful new X-ray diffraction surface mapping technique
2015 · Christo Guguschev, Roald Tagle, et al. · Journal of Applied Crystallography · 27
Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation
2004 · F.-M. Kiessling, P. Rudolph, et al. · Journal of Crystal Growth · 22
Efficient diameter enlargement of bulk AlN single crystals with high structural quality
2023 · Carsten Hartmann, Merve Pinar Kabukcuoglu, et al. · Applied Physics Express · 21
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Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry
2005 · P. Rudolph, Ch. Frank-Rotsch, et al. · Materials Science and Engineering A · 20
Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs)
2004 · P. Rudolph, Ch. Frank-Rotsch, et al. · Journal of Crystal Growth · 18
Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices
2023 · Rajappan Radhakrishnan Sumathi, Alexander Gybin, et al. · Crystal Research and Technology · 16
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Melt Growth and Physical Properties of Bulk LaInO3 Single Crystals
2021 · Zbigniew Galazka, Klaus Irmscher, et al. · physica status solidi (a) · 16
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Growth of SrTiO 3 bulk single crystals using edge-defined film-fed growth and the Czochralski methods
2015 · Christo Guguschev, Zbigniew Galazka, et al. · CrystEngComm · 16
Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study
1996 · U. Juda, O. Scheerer, et al. · Journal of Applied Physics · 16
Dislocation patterning during crystal growth of semiconductor compounds (GaAs)
2005 · Ch. Frank-Rotsch, U. Juda, et al. · Materials Science and Technology · 14
Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer
2019 · Wolfram Miller, Nikolay Abrosimov, et al. · Crystals · 13
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Influence of oxygen partial pressure on SrTiO 3 bulk crystal growth from non-stoichiometric melts
2015 · Christo Guguschev, Dirk J. Kok, et al. · CrystEngComm · 13
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
2018 · A. Mogilatenko, A. Knauer, et al. · Journal of Crystal Growth · 12
Properties of a highly compensated high-purity germanium
2024 · Pradeep Chandra Palleti, Palvan Seyidov, et al. · Journal of Materials Science Materials in Electronics · 11
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Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
2016 · Christo Guguschev, Dirk J. Kok, et al. · Journal of Crystal Growth · 11
VGF growth of GaAs utilizing heater-magnet module
2014 · Christiane Frank-Rotsch, Natasha Dropka, et al. · Journal of Crystal Growth · 11
Complexing in silicon induced by surface reactions: Electron paramagnetic resonance detection of a 6-platinum cluster
1992 · M. Höhne, U. Juda · Journal of Applied Physics · 11
Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium Ingots
2023 · Aravind Subramanian, Nikolay Abrosimov, et al. · Journal of Electronic Materials · 10
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Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone method
2020 · H.-J. Rost, I. Buchovska, et al. · Journal of Crystal Growth · 10
Works count: 62
Citation count: 686
H-index: 15
I10-index: 26
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