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Author

Mohamed Bouslama

Observed names: Bouslama, Mohamed, M. Bouslama
Institution: III V Lab
ORCID: 0000-0001-8297-1772
Observed ORCID: 0000-0001-8297-1772
OpenAlex ID: A5059585051
Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies
2020 · P. Vigneshwara Raja, Mohamed Bouslama, et al. · IEEE Transactions on Electron Devices · 80
Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-$\mu$ m Ultrashort Gate Length
2019 · Mohamed Bouslama, Vincent Gillet, et al. · IEEE Transactions on Microwave Theory and Techniques · 38
Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties
2021 · P. Vigneshwara Raja, Nandha Kumar Subramani, et al. · Electronics · 34
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Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations
2021 · Mohamed Bouslama, P. Vigneshwara Raja, et al. · AIP Advances · 24
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Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique
2022 · P. Vigneshwara Raja, Emmanuel Dupouy, et al. · IEEE Transactions on Electron Devices · 18
An Unequally Spaced Multi-Tone Load–Pull Characterization Technique for Simultaneous Linearity and Efficiency Assessment of RF Power Devices
2019 · Vincent Gillet, Mohamed Bouslama, et al. · IEEE Transactions on Microwave Theory and Techniques · 15
Time Domain Drain Lag Measurement and TCAD-based Device Simulations of AlGaN/GaN HEMT: Investigation of Physical Mechanism
2019 · Nandha Kumar Subramani, Mohamed Bouslama, et al. · European Microwave Integrated Circuits Conference · 11
Low Frequency Drain Noise Characterization of Different Technologies of GaN HEMTs:Investigation of Trapping Mechanism
2018 · Mohamed Bouslama, Ahmad Al Hajjar, et al. · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · 10
V-Band Power Amplifier MMIC on InAlN/GaN/SiC HEMTs Technology
2023 · M. Bouslama, S. Piotrowicz, et al. · European Microwave Integrated Circuits Conference · 9
Novel AlN/GaN HEMT Electrical Model including Trapping Effects
2018 · Mohamed Bouslama, Julien Couvidat, et al. · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · 7
Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs
2020 · Khushboo Sharma, Emmanuel Dupouy, et al. · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · 6
HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μm AlGaN/GaN HEMTs
2022 · P. Vigneshwara Raja, Jean-Christophe Nallatamby, et al. · IEEE Transactions on Microwave Theory and Techniques · 4
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HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance
2022 · P. Vigneshwara Raja, Jean-Christophe Nallatamby, et al. · IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization · 4
Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate
2018 · Mohamed Bouslama, Ahmad Al Hajjar, et al. · European Microwave Integrated Circuits Conference · 4
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Investigation of Thermal Resistance Extraction of GaN HEMTs through DCT Measurements Techniques and TCAD-Based Physical Simulations
2024 · M. Bouslama, J.C. Jacquet, et al. · European Microwave Integrated Circuits Conference · 3
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Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations
2022 · Jean-Christophe Nallatamby, Jose Anderson Silva Dos Santos, et al. · European Microwave Integrated Circuits Conference · 3
Linearity and Efficiency Characterization of AlGaN/GaN and InAlGaN/GaN HEMTs devices using Multi-tone Large Signal Measurements
2019 · V. Gillet, M. Bouslama, et al. · European Microwave Conference (EuMC) · 3
Characterization of Different Technologies of GaN HEMTs of 0,15 μm Ultra-Short Gate Length: Identification of Traps Using TCAD Based 2D Physics-based Simulation
2019 · Mohamed Bouslama, Raphael Sommet, et al. · European Microwave Integrated Circuits Conference · 3
Trapping Investigation of the GaN HEMT Devices Using the Low Frequency Noise Characterization
2019 · Mohamed Bouslama, Jean-Christophe Nallatamby, et al. · EasyChair preprint · 3
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Investigation of V-Band GaN MMIC Integration in an Advanced FO-WLP Package
2025 · M. Bouslama, S. Piotrowicz, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 1
V-Band InAlN/GaN/SiC MMIC Amplifier Embedded by Fan Out Wafer Level Packaging Technology
2025 · S. Piotrowicz, M. Bouslama, et al. · European Microwave Integrated Circuits Conference · 1
Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯50μmon Silicon Substrate
2018 · Mohamed Bouslama, Ahmad Al Hajjar, et al. · European Microwave Conference (EuMC) · 1
Modeling Methods for GaN Circuits in FOWLP Packages with Quantitative Model Validation
2026 · Tao Petit, Mohamed Bouslama, et al. · European Microwave Integrated Circuits Conference
Transient Thermal Response in AlGaN/GaN HEMT Transistor: Influence of Dissipated Power on Thermal Time Constants
2026 · Jakani, Anass, Jacquet, Jean-Claude, et al. · HAL
Investigation sur l'extraction de la résistance thermique des GaN-HEMT par la méthode de mesure I-DLTS
2026 · Jakani, Anass, Jacquet, Jean-Claude, et al. · HAL
Works count: 35
Citation count: 282
H-index: 9
I10-index: 8
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