Author

Francesco Bertazzi

Observed names: BERTAZZI F, BERTAZZI, FRANCESCO, Bertazzi, F., Bertazzi, Francesco, F. Bertazzi, Francesco BERTAZZI, Francesco, Bertazzi

Institution: Politecnico di Torino

Observed institutions: Boston University, University of Modena and Reggio Emilia, University of Padua, Politecnico di Torino, Anna University, Chennai, Institute of Electronics, Computer and Telecommunication Engineering, Vertically Integrated Systems (Germany), AIM Infrarot-Module (Germany), National Research Council, Osram Opto Semiconductors, University of Turin

ORCID: 0000-0002-9409-4807

Observed ORCID: 0000-0002-9409-4807

OpenAlex ID: A5059802572

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

2013 · Giovanni Verzellesi, Davide Saguatti, et al. · Journal of Applied Physics · 415

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model

2009 · Francesco Bertazzi, Michele Moresco, et al. · Journal of Applied Physics · 120

Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes

2015 · Marco Mandurrino, Giovanni Verzellesi, et al. · physica status solidi (a) · 98

A numerical study of Auger recombination in bulk InGaN

2010 · Francesco Bertazzi, Michele Goano, et al. · Applied Physics Letters · 89

Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations

2007 · Michele Goano, Francesco Bertazzi, et al. · Journal of Applied Physics · 88

Numerical analysis of indirect Auger transitions in InGaN

2012 · Francesco Bertazzi, Michele Goano, et al. · Applied Physics Letters · 79

Alloy scattering in AlGaN and InGaN: A numerical study

2007 · Enrico Bellotti, Francesco Bertazzi, et al. · Journal of Applied Physics · 74

Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

2020 · Matteo Meneghini, Carlo De Santi, et al. · Journal of Applied Physics · 71

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Role of defects in the thermal droop of InGaN-based light emitting diodes

2016 · C. De Santi, M. Meneghini, et al. · Journal of Applied Physics · 62

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Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport

2013 · Mariangela Gioannini, Ariel P. Cedola, et al. · IEEE Journal of Photovoltaics · 61

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

2013 · Francesco Bertazzi, Xiangyu Zhou, et al. · Applied Physics Letters · 58

A numerical study of carrier impact ionization in AlxGa1−xN

2012 · Enrico Bellotti, Francesco Bertazzi · Journal of Applied Physics · 56

Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study

2007 · Francesco Bertazzi, Michele Goano, et al. · Journal of Electronic Materials · 50

A fast reduced-order model for the full-wave FEM analysis of lossy inhomogeneous anisotropic waveguides

2002 · F. Bertazzi, O.A. Peverini, et al. · IEEE Transactions on Microwave Theory and Techniques · 48

A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section

2001 · M. Goano, F. Bertazzi, et al. · IEEE Transactions on Microwave Theory and Techniques · 45

Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors

2015 · Marco Vallone, Marco Mandurrino, et al. · Journal of Electronic Materials · 44

VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator

2019 · Alberto Tibaldi, Francesco Bertazzi, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 43

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Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

2015 · Marco Mandurrino, Michele Goano, et al. · Journal of Computational Electronics · 43

Full-Band Monte Carlo Simulation of HgCdTe APDs

2010 · Francesco Bertazzi, Michele Moresco, et al. · Journal of Electronic Materials · 42

Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation

2008 · Enrico Furno, Francesco Bertazzi, et al. · Solid-State Electronics · 42

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

2015 · M. La Grassa, M. Meneghini, et al. · Microelectronics Reliability · 39

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

2021 · Nicola Roccato, Francesco Piva, et al. · Journal of Physics D Applied Physics · 37

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A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions—Part I: Large-Signal Sensitivity

2016 · Simona Donati Guerrieri, Fabrizio Bonani, et al. · IEEE Transactions on Electron Devices · 36

Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective

2015 · Francesco Bertazzi, Michele Goano, et al. · Applied Physics Letters · 34

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Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook

2013 · Enrico Bellotti, Francesco Bertazzi, et al. · IEEE Transactions on Electron Devices · 34

Works count: 234

Citation count: 2,883

H-index: 29

I10-index: 70