Author

Hans Flietner

Observed names: Flietner, H., Flietner, H. (ed.), Flietner, Hans, H Flietner, H. Flietner, Hans Flietner [Hrsg.]

Observed institutions: University of Liverpool, Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Helmholtz-Zentrum Dresden-Rossendorf, Bundeswehr, Evolution et ingénierie de systèmes dynamiques

OpenAlex ID: A5059862108

Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress

1996 · W. Füssel, M. Schmidt, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 110

The E(k) Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor Contact

1972 · H. Flietner · physica status solidi (b) · 89

IR study of short-range and local order in SiO2 and SiOx films

1995 · Igor P. Lisovskii, Vladimir G. Litovchenko, et al. · Journal of Non-Crystalline Solids · 62

Investigation of native-oxide growth on HF-treated Si(111) surfaces by measuring the surface-state distribution

1994 · H. Angermann, Th. Dittrich, et al. · Applied Physics A · 48

Spectrum and nature of surface states

1974 · Hans Flietner · Surface Science · 42

Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density

1996 · H. Angermann, K. Kliefoth, et al. · Applied Surface Science · 40

Reduced interface state density after photocurrent oscillations and electrochemical hydrogenation of n-Si(111): A surface photovoltage investigation

1995 · S. Rauscher, Th. Dittrich, et al. · Applied Physics Letters · 40

Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulses

1979 · K Heilig, H Flietner, et al. · Journal of Physics D Applied Physics · 38

Spectrum and nature of defects at interfaces of semiconductors with predominant homopolar bonding

1988 · Hans Flietner · Surface Science · 36

Ultrathin luminescent nanoporous silicon on n-Si: pH dependent preparation in aqueous NH4F solutions

1995 · Th. Dittrich, S. Rauscher, et al. · Applied Physics Letters · 26

Character of SiSiO2 interface states from analysis of the CV term spectra

1976 · H. Flietner, Ngo Duong Sinh · physica status solidi (a) · 26

Eigenschaften gewöhnlicher Halbleiteroberflächen

1962 · H. Flietner · physica status solidi (b) · 25

Electronic properties of the HF-passivated Si(111) surface during the initial oxidation in air

1993 · Th. Dittrich, H. Angermann, et al. · physica status solidi (a) · 24

Surface Electronic Properties of Electrolytically Hydrogen Terminated Si(111)

1994 · Th. Dittrich, H. Angermann, et al. · Journal of The Electrochemical Society · 23

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Optimization of Anodic Silicon Oxide Films for Low Temperature Passivation of Silicon Surfaces

1993 · G. Mende, H. Flietner, et al. · Journal of The Electrochemical Society · 23

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Influence of the oxidation process on the luminescence of HF-treated porous silicon

1995 · Th. Dittrich, H. Flietner, et al. · Thin Solid Films · 22

U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres

1985 · H. Flietner · physica status solidi (a) · 20

Electronic Properties of n‐Si(111) during Electrochemical Surface Transformation toward H‐Termination

1995 · Th. Dittrich, S. Rauscher, et al. · Journal of The Electrochemical Society · 18

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Passivity and electronic properties of the silicon/silicondioxide interface

1995 · H. Flietner · Materials science forum · 18

Interface states of the Si/SiO2 system and their separation in groups

1977 · H. Flietner, W. Füssel, et al. · physica status solidi (a) · 16

The electrophysical properties of anodically grown silicon oxide films

1989 · G. Mende, E. Hensel, et al. · Thin Solid Films · 15

Oberflächenleitfähigkeit unter Berücksichtigung der Streuung der Ladungsträger an der Oberfläche bei kleinen Bandverbiegungen

1959 · Hans Flietner · Annalen der Physik · 14

Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defects

1996 · H. Flietner, W. Füssel, et al. · Applied Surface Science · 13

Defect generation at silicon surfaces during etching and initial stage of oxidation

1995 · H. Angermann, K. Kliefoth, et al. · Microelectronic Engineering · 13

Influence of photoluminescence and trapping on the photovoltage at the por-Si/p-Si structure

1996 · V.Yu Timoshenko, P.K Kashkarov, et al. · Thin Solid Films · 12

Works count: 65

Citation count: 902

H-index: 18

I10-index: 27