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Alex Burenkov

Observed names: A. Burenkov, Alexander Burenkov, Burenkov, A., Burenkov, Alex
ORCID: 0009-0002-0487-3995
Observed ORCID: 0009-0002-0487-3995
OpenAlex ID: A5060075709
Corner effect in double and triple gate FinFETs
2003 · A. Burenkov, J. Lorenz · 56
Trajectory split method for Monte Carlo simulation of ion implantation
1995 · W. Bohmayr, A. Burenkov, et al. · IEEE Transactions on Semiconductor Manufacturing · 34
Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation
2016 · Alex Burenkov, Christian D. Matthus, et al. · IEEE Sensors Journal · 24
Ion sputtering at grazing incidence for SIMS-analysis
2004 · M. Ullrich, A. Burenkov, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 23
Simulation of process variations in FinFET transistor patterning
2016 · Eberhard Baer, Alex Burenkov, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 11
Challenges in TCAD simulations of tunneling field effect transistors
2011 · C. Kampen, A. Burenkov, et al. · European Solid-State Device Research Conference · 11
Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation
1995 · W. Bohmayr, A. Burenkov, et al. · Simulation of Semiconductor Devices and Processes · 11
Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs
2013 · Christian Strenger, Viktoryia Uhnevionak, et al. · ECS Transactions · 9
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Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires
2023 · Paweł Piotr Michałowski, Jonas Müller, et al. · Measurement · 8
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Double patterning: Simulating a variability challenge for advanced transistors
2013 · Peter Evanschitzky, Alex Burenkov, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 8
Simulation of BF[sub 3] plasma immersion ion implantation into silicon
2012 · A. Burenkov, A. Hahn, et al. · AIP conference proceedings · 8
Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
2013 · Christian Strenger, Viktoryia Uhnevionak, et al. · Materials science forum · 7
Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
2013 · Viktoryia Uhnevionak, Christian Strenger, et al. · Materials science forum · 7
Self-heating effects in nano-scaled MOSFETs and thermal aware compact models
2011 · A. Burenkov, J. Lorenz · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · 7
Angular distributions of sputtered silicon at grazing gallium ion beam incidence
2011 · A. Burenkov, M. Sekowski, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
All-quantum simulation of an ultra-small SOI MOSFET
2008 · V. Vyurkov, I. Semenikhin, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7
Numerical evaluation of the ITRS transistor scaling
2014 · Roland Nagy, Alex Burenkov, et al. · Journal of Computational Electronics · 6
Self-heating of nano-scale SOI MOSFETs: TCAD and molecular dynamics simulations
2013 · Alex Burenkov, Viktor Belko, et al. · International Workshop on Thermal Investigations of ICs and Systems · 6
Monte Carlo simulation of silicon amorphization during ion implantation
1998 · W. Bohmayr, A. Burenkov, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 6
Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation
2022 · Chiara Rossi, Alexander Burenkov, et al. · Solid-State Electronics · 5
Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis
2013 · V. Uhnevionak, C. Strenger, et al. · European Solid-State Device Research Conference · 5
BF[sub 3] PIII modeling: Implantation, amorphisation and diffusion
2012 · Z. Essa, F. Cristiano, et al. · AIP conference proceedings · 5
Hierarchical variability-aware compact models of 20nm bulk CMOS
2015 · Xingsheng Wang, Dave Reid, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 4
Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
2014 · Viktoryia Uhnevionak, Alex Burenkov, et al. · Materials science forum · 4
Large boron‐interstitial cluster modelling in BF3 plasma implanted silicon
2013 · Z. Essa, F. Cristiano, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Works count: 92
Citation count: 331
H-index: 8
I10-index: 7
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