Work

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

Year: 2014

Type: article

Abstract: For the characterization ofn-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. The results of the calculation reveal a strong dependence of the Hall factor on the gate voltage. Depending on the gate voltage applied, the values of the Hall factor vary between 1.3 and 1.5. Sheet carrier density and drift mobility values derived from the Hall-effect measurements using our new gate-voltage-dependent Hall factor show very good agreement with simulations performed with Sentaurus Device of Synopsys.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.778-780.483

Authors: Viktoryia Uhnevionak, Alex Burenkov, Christian Strenger, Vincent Mortet, Elena Bedel-Pereira, Fuccio Cristiano, Anton J. Bauer, Peter Pichler

Institutions: Fraunhofer Institute for Integrated Systems and Device Technology, FZU - Institute of Physics of the Czech Academy of Sciences, Université de Toulouse

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: Agence Nationale de la Recherche, Bundesministerium für Bildung und Forschung

OpenAlex ID: W2000242746

FWCI: 0.487

Cites: 9

Cited by: 4

Related to: 10