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Heiko Nielen
Observed name:
H. Nielen
Institution:
Infineon Technologies (Germany)
Observed institutions:
Siemens (Germany),
Infineon Technologies (Germany)
OpenAlex ID:
A5060115234
Understanding and modeling AC BTI
2011
·
Hans Reisinger
, Tibor Grasser
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
108
Practical aspects of reliability analysis for IC designs
2006
·
T. Pompl
, C. Schlünder
, et al.
·
ACM/IEEE Design Automation Conference (DAC)
·
27
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process
2016
·
A. Martin
, R.-P. Vollertsen
, et al.
·
Microelectronics Reliability
·
24
A fast Wafer Level Reliability (fWLR) Monitoring concept as a continuous reliability indicator for wafer mass production
2020
·
A. Martin
, A. Mitchell
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
14
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation
2023
·
Andreas Martin
, Johannes Berger
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
13
New Design Optimized and IC Area Efficient Rules for the Prevention of Plasma Processing Induced Damage on CMOS Circuit Reliability
2022
·
Andreas Martin
, Bernd Schuler
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
13
Anomaly of NBTI data for PMOS transistors degraded by plasma processing induced charging damage (PID)
2022
·
Andreas Martin
, Lukas Valdman
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
13
Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation
2022
·
Andreas Martin
, Johannes Berger
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
8
Practical aspects of reliability analysis for IC designs
2006
·
T. Pompl
, C. Schlunder
, et al.
·
ACM/IEEE Design Automation Conference (DAC)
·
6
Drift compensating effect during hot-carrier degradation of 130nm technology dual gate oxide P-channel transistors
2013
·
Gunnar Andreas Rott
, Heiko Nielen
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
5
Overestimation of NBTI lifetimes measured on hot chuck for PMOS with antennas for PID assessment
2024
·
Andreas Martin
, Jonathan Kampmann
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
4
Restrictive antenna rules limiting PID degradation for MOS transistors with connected MIM-capacitors
2023
·
Andreas Martin
, Phi-Long Pham
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
2
Stress and plasticity in passivated interconnect lines
1999
·
Heiko Nielen
, Herbert Göbel
, et al.
·
AIP conference proceedings
·
1
Dependence of Strain and Plasticity During Thermal Cycling of Different Aluminum Metallization on Alloy Composition, Passivation Material and Passivation Geometry
1997
·
Heiko Nielen
, Herbert Göbel
, et al.
·
MRS Proceedings
·
1
ウエハプロセスのための自動車用品質を達成するためのツールとしての高速ウエハレベル信頼性モニタリング【Powered by NICT】
2016
·
Alejandro Ramos Martín
, Vollertsen R.-P.
, et al.
·
Microelectronics Reliability
Efficient fWLR inline monitoring of hot carrier reliability by means of one simple, comprehensive parameter
2006
·
R. Vollertsen
, H. Nielen
·
IEEE International Integrated Reliability Workshop final report
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Works count:
17
Citation count:
239
H-index:
8
I10-index:
7
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