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S. Dalmasso

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999 · N. Grandjean, B. Damilano, et al. · Journal of Applied Physics · 281
Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
2000 · P. Vennéguès, M. Benaissa, et al. · Applied Physics Letters · 134
Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth
1999 · B. Damilano, N. Grandjean, et al. · Applied Physics Letters · 121
Atomic structure of pyramidal defects in Mg-doped GaN
2003 · P. Vennéguès, M. Leroux, et al. · Physical review. B, Condensed matter · 97
High-temperature annealing and optical activation of Eu-implanted GaN
2004 · K. Lorenz, U. Wahl, et al. · Applied Physics Letters · 70
Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy
2001 · Eric Feltin, Stéphane Dalmasso, et al. · Japanese Journal of Applied Physics · 55
Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes
2002 · S. Dalmasso, B. Damilano, et al. · physica status solidi (a) · 54
Optical Characterization of AlxGa1?xN Alloys (x < 0.7) Grown on Sapphire or Silicon
2002 · M. Leroux, S. Dalmasso, et al. · physica status solidi (b) · 49
High temperature annealing of rare earth implanted GaN films: Structural and optical properties
2005 · K. Lorenz, U. Wahl, et al. · Optical Materials · 48
Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN
2002 · M. Leroux, P. Venn�gu�s, et al. · physica status solidi (a) · 44
GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
1999 · N. Grandjean, J. Massies, et al. · Applied Physics Letters · 44
Influence of high Mg doping on the microstructural and optoelectronic properties of GaN
2002 · P Vennéguès, M Benaissa, et al. · Materials Science and Engineering B · 40
Temperature dependent optical properties of ZnO thin film using ellipsometry and photoluminescence
2018 · M.-B. Bouzourâa, Y. Battie, et al. · Superlattices and Microstructures · 19
Green electroluminescent (Ga, In, Al)N LEDs grownon Si (111)
2000 · S. Dalmasso, E. Feltin, et al. · Electronics Letters · 18
Comparative study of ZnO optical dispersion laws
2017 · M.-B. Bouzourâa, Y. Battie, et al. · Superlattices and Microstructures · 17
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Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
2000 · N Grandjean, B Damilano, et al. · Solid State Communications · 14
Implantation and annealing studies of Tm-implanted GaN
2003 · K Lorenz, E Alves, et al. · Materials Science and Engineering B · 13
Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE
2001 · S Dalmasso, B Damilano, et al. · Materials Science and Engineering B · 13
Photoluminescence studies of Eu‐implanted GaN epilayers
2005 · V. Katchkanov, K. P. O'Donnell, et al. · physica status solidi (b) · 12
Effects of Built-in Polarization Field on the Optical Properties of AlGaN/GaN Quantum Wells
1999 · N. Grandjean, B. Damilano, et al. · physica status solidi (a) · 12
Vertical Cavity InGaN LEDs Grown by MOVPE
2002 · P. de Mierry, J.M. Bethoux, et al. · physica status solidi (a) · 11
Physical and chemical analyses on single source precursor growth CdSe semiconductor nanomaterials
2010 · D. Arl, S. Dalmasso, et al. · Materials Chemistry and Physics · 10
Extended X-ray absorption fine structure studies of thulium doped GaN epilayers
2004 · V. Katchkanov, J.F.W. Mosselmans, et al. · Superlattices and Microstructures · 10
Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties
2004 · M. Leroux, P. Vennéguès, et al. · The European Physical Journal Applied Physics · 10
Improved Radiative Efficiency using Self-Formed GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
2000 · B. Damilano, N. Grandjean, et al. · physica status solidi (a) · 10
Works count: 56
Citation count: 1,287
H-index: 15
I10-index: 25
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