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Dominik Martin Kleimaier

Observed names: D. Kleimaier, Dominik Kleimaier, Kleimaier, Dominik
ORCID: 0000-0002-7235-6554
Observed ORCID: 0000-0002-7235-6554
OpenAlex ID: A5061117103
FeFET: A versatile CMOS compatible device with game-changing potential
2020 · Sven Beyer, Stefan Dunkel, et al. · IEEE International Memory Workshop (IMW) · 171
Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability
2021 · Dominik Kleimaier, Halid Mulaosmanovic, et al. · IEEE Electron Device Letters · 85
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read
2021 · Halid Mulaosmanovic, Dominik Kleimaier, et al. · Nanoscale · 69
Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs
2020 · Halid Mulaosmanovic, Franz Muller, et al. · IEEE Transactions on Electron Devices · 50
Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines
2024 · Yixin Xu, Zijian Zhao, et al. · Science Advances · 27
22FDSOI device towards RF and mmWave applications
2021 · Zhixing Zhao, Steffen Lehmann, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 17
Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media
2018 · D. S. Bick, T. B. Krebs, et al. · Langmuir · 17
Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs
2021 · Halid Mulaosmanovic, Stefan Dunkel, et al. · IEEE Transactions on Electron Devices · 14
Charge trapping challenges of CMOS embedded complementary FeFETs
2024 · Sven Beyer, Dominik Kleimaier, et al. · IEEE International Memory Workshop (IMW) · 12
Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET
2023 · Zijian Zhao, Shan Deng, et al. · ACS Applied Materials & Interfaces · 6
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Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors
2024 · Dominik Kleimaier, Stefan Dünkel, et al. · Non-Volatile Memory Technology Symposium · 4
Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate
2024 · Zijian Zhao, Sola Woo, et al. · ACS Applied Materials & Interfaces · 3
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Temperature-Dependent Detrapping Behavior of p-/n-Type Ferroelectric FETs With Si/SiGe Channel
2025 · S. Yang, F. Müller, et al. · IEEE Electron Device Letters · 2
Towards Uncertainty-aware Robotic Perception via Mixed-signal BNN Engine Leveraging Probabilistic Quantum Tunneling
2025 · Likai Pei, Yu Zhou, et al. · ACM/IEEE Design Automation Conference (DAC) · 2
On the Origin of Holes During Polarization Reset in Floating Body Ferroelectric FETs Towards Improving Switching Efficiency
2024 · Zhouhang Jiang, Yi Xiao, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2
Layout-Induced Strain Study for RF Performance Improvement of 22-nm UTBB FDSOI PFET
2021 · Karen Sloyan, Florent Ravaux, et al. · IEEE Transactions on Electron Devices · 2
A $22 \text{FDX}{ }^{\circledR}$ Wi-Fi PA Achieving Output Power of 1.1Watts with $41 \%$ PAE at 3.8V Supply Voltage
2025 · Arul Balasubramaniyan, Abdellatif Bellaouar, et al. · 1
Reliability Characterization of BOXFET Devices with Emphasis on Temperature Dependence
2026 · W. Arfaoui, A. Muhlhof, et al. · IEEE International Reliability Physics Symposium proceedings
Reliability Characterization of BOXFET Devices with Emphasis on Temperature Dependence
2026 · IEEE International Symposium on Reliability Physics 2026, Arfaoui, Wafa, et al. · Underline Science Inc.
Short-term charge trapping effects in ferroelectric FETs: impact of pulse amplitude and timing
2026 · Dominik Kleimaier, Stefan Dünkel, et al. · Solid-State Electronics
Strain mapping and simulation of transistor structures in a 22nm FDSOI technology
2024 · Dirk Utess, Dominik Martin Kleimaier, et al. · BIO Web of Conferences
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Works count: 22
Citation count: 484
H-index: 9
I10-index: 9
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