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D. D. Koleske

Trapping effects and microwave power performance in AlGaN/GaN HEMTs
2001 · S.C. Binari, K. Ikossi, et al. · IEEE Transactions on Electron Devices · 660
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
2005 · S. R. Lee, A. M. West, et al. · Applied Physics Letters · 293
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
2001 · P. B. Klein, S. C. Binari, et al. · Applied Physics Letters · 288
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
2002 · D.D Koleske, A.E Wickenden, et al. · Journal of Crystal Growth · 281
GaN decomposition in H2 and N2 at MOVPE temperatures and pressures
2001 · D.D. Koleske, A.E. Wickenden, et al. · Journal of Crystal Growth · 233
The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation
1998 · V.M Bermudez, D.D Koleske, et al. · Applied Surface Science · 155
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
2004 · A.A. Allerman, M.H. Crawford, et al. · Journal of Crystal Growth · 153
Resistivity control in unintentionally doped GaN films grown by MOCVD
2003 · A.E. Wickenden, D.D. Koleske, et al. · Journal of Crystal Growth · 112
Persistent photoconductivity in n-type GaN
1997 · G. Beadie, W. S. Rabinovich, et al. · Applied Physics Letters · 96
Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors
2001 · P.B. Klein, S.C. Binari, et al. · Electronics Letters · 91
Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress
2003 · J. A. Mittereder, S. C. Binari, et al. · Applied Physics Letters · 80
Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells
2012 · J. J. Wierer, D. D. Koleske, et al. · Applied Physics Letters · 74
Ohmic contacts to Al‐rich AlGaN heterostructures
2017 · E. A. Douglas, S. Reza, et al. · physica status solidi (a) · 71
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Optical detection of electron paramagnetic resonance in electron-irradiated GaN
1999 · C. Bozdog, H. Przybylinska, et al. · Physical review. B, Condensed matter · 68
Composition and structure of the GaN{0001¯}-(1×1) surface
1996 · M. M. Sung, J. Ahn, et al. · Physical review. B, Condensed matter · 60
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
2000 · A. E. Wickenden, D. D. Koleske, et al. · Journal of Electronic Materials · 58
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers
2015 · D.D. Koleske, A.J. Fischer, et al. · Journal of Crystal Growth · 53
Design and calibration of a scanning force microscope for friction, adhesion, and contact potential studies
1995 · D. D. Koleske, G. U. Lee, et al. · Review of Scientific Instruments · 51
HREELS of H/GaN(0001): evidence for Ga termination
1999 · V.J. Bellitto, B.D. Thoms, et al. · Surface Science · 43
High-field transport studies of gan
2002 · J.M. Barker, R. Akis, et al. · Physica B Condensed Matter · 42
The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films
1999 · A. E. Wickenden, D. D. Koleske, et al. · Journal of Electronic Materials · 38
Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers
2003 · E. R. Glaser, J. A. Freitas, et al. · Physical review. B, Condensed matter · 37
Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN
2001 · M. W. Bayerl, M. S. Brandt, et al. · Physical review. B, Condensed matter · 37
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
2000 · H. Teisseyre, T. Suski, et al. · Physical review. B, Condensed matter · 37
Generation of pseudorandom sequences for use in cross-correlation modulation
1992 · D. D. Koleske, S. J. Sibener · Review of Scientific Instruments · 37
Works count: 78
Citation count: 3,623
H-index: 27
I10-index: 45
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