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Alvin H. Feingold
Observed names:
A Feingold,
A. Feingold,
A. H. Feingold,
A.H Feingold,
A.H. Feingold,
Alvin Feingold
show all 6
Observed institutions:
AT&T (United States),
DuPont (United States),
Cornell University,
Electro Standards Laboratories (United States)
OpenAlex ID:
A5063434010
Mass transport analysis for ostwald ripening and related phenomena
1966
·
Che-Yu Li
, J.M Blakely
, et al.
·
Acta Metallurgica
·
72
Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor
1991
·
A. Katz
, A. Feingold
, et al.
·
Journal of Applied Physics
·
48
The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP
1992
·
A. Katz
, A. Feingold
, et al.
·
Journal of Applied Physics
·
37
Experimental verification of mass transport analysis for ostwald ripening and related phenomena
1968
·
A.H Feingold
, Li Che-Yu
·
Acta Metallurgica
·
19
Rapid thermal low-pressure chemical vapor deposition of SiOx films onto InP
1991
·
A. Katz
, A. Feingold
, et al.
·
Applied Physics Letters
·
17
64 /spl times/ 64 fast optical switching module
2002
·
E. Shekel
, A. Feingold
, et al.
·
Optical Fiber Communication Conference
·
13
Compliant dielectric and magnetic materials for buried components
2002
·
A. Feingold
, Marianne Heinz
, et al.
·
13
New Microwave Applications for Thick Film Thermistors
1998
·
A. Feingold
, R. L. Wahlers
, et al.
·
SPIE eBooks
·
12
Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical vapor deposition
1992
·
A. Katz
, A. Feingold
, et al.
·
Applied Physics Letters
·
10
Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition
1992
·
A Katz
, A Feingold
, et al.
·
Semiconductor Science and Technology
·
10
PDF
Co‐sintering Zirconia Electrolyte and Insulator Tapes for Sensor Applications
2012
·
Wenxia Li
, Alvin Feingold
, et al.
·
Journal of the American Ceramic Society
·
9
Uncooled Infrared Detector Using a Thin InAsSb Layer Acting as a Gate on a GaAs Field-Effect Transistor
2006
·
Y. Paltiel
, A. Sher
, et al.
·
IEEE Sensors Journal
·
9
High quality rapid thermal annealing of InP and GaAs substrates under low pressure tertiarybutylphosphine and tertiarybutylarsine ambients
1991
·
A. Katz
, A. Feingold
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
9
W(Zn) selectively deposited and locally diffused ohmic contacts to p-InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition
1993
·
A. Katz
, A. El-Roy
, et al.
·
Applied Physics Letters
·
8
Rapid thermal processing of WSix contacts to InP in low-pressure N2:H2 and tertiarybutylphosphine ambients
1991
·
A. Katz
, A. Feingold
, et al.
·
Journal of Applied Physics
·
8
Formation of TiNxohmic contacts to InGaAs/InP by means of a load-locked integrated process
1992
·
A Katz
, A Feingold
, et al.
·
Semiconductor Science and Technology
·
7
Highly stable silicon dioxide films deposited by means of rapid thermal low-pressure chemical vapor deposition onto InP
1991
·
A. Katz
, A. Feingold
, et al.
·
Applied Physics Letters
·
7
Tungsten metallization onto InP prepared by rapid thermal low-pressure chemical vapor deposition of WF6 and H2
1992
·
A. Katz
, A. Feingold
, et al.
·
Applied Physics Letters
·
6
Hybrid electron cyclotron resonance-RF plasma etching of TiNxthin films grown by low pressure rapid thermal metalorganic chemical vapour deposition
1991
·
S J Pearton
, A Katz
, et al.
·
Semiconductor Science and Technology
·
6
PDF
Rapid thermal low-pressure metal-organic chemical vapor deposition (RT-LPMOCVD) of semiconductor, dielectric and metal film onto InP and related materials
1994
·
A. Feingold
, A. Katz
·
Materials Science and Engineering R Reports
·
5
Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine
1993
·
A. Katz
, A. Feingold
, et al.
·
Applied Physics Letters
·
4
Self-aligned, metal-masked dry etch processing of III–V electronic and photonic devices
1992
·
S.J. Pearton
, A. Katz
, et al.
·
Materials Science and Engineering B
·
4
Lead Free Dielectric and Magnetic Materials for Integrated Passives
2014
·
R. L. Wahlers
, M. Heinz
, et al.
·
2
Lead free, zero shrink, substrate bonded LTCC system
2003
·
R. L. Wahlers
, A. Feingold
, et al.
·
2
Rapid thermal low pressure metalorganic chemical vapor deposition of In0.53Ga0.47As films using tertiarybutylarsine
1993
·
A. Katz
, A. Feingold
, et al.
·
Applied Physics Letters
·
2
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Works count:
47
Citation count:
349
H-index:
10
I10-index:
10
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