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S. Munawar Basha
Observed name:
S Munawar Basha
Institution:
C. Abdul Hakeem College (Autonomous)
Observed institutions:
Nanyang Technological University,
Anna University, Chennai,
C. Abdul Hakeem College (Autonomous),
Temasek Laboratories,
Temasek Laboratories@NTU
ORCID:
0000-0001-9547-4257
Observed ORCID:
0000-0001-9547-4257
OpenAlex ID:
A5063664240
Investigations on cobalt doped GaN for spintronic applications
2010
·
S. Munawar Basha
, S. Ramasubramanian
, et al.
·
Journal of Crystal Growth
·
23
Magnetic properties of Ni doped gallium nitride with vacancy induced defect
2009
·
S. Munawar Basha
, S. Ramasubramanian
, et al.
·
Journal of Magnetism and Magnetic Materials
·
17
Micro Raman analysis of MOCVD grown gallium nitride epilayers irradiated with light and heavy ions
2011
·
S. Munawar Basha
, K. Asokan
, et al.
·
Materials Chemistry and Physics
·
16
Effect of 100MeV Ni9+ ion irradiation on MOCVD grown n-GaN
2011
·
V. Suresh Kumar
, J. Kumar
, et al.
·
Physica B Condensed Matter
·
16
Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
2013
·
L. Ravikiran
, K. Radhakrishnan
, et al.
·
Journal of Applied Physics
·
12
PDF
Magnetic properties of gadolinium and carbon co-doped gallium nitride
2016
·
N. Syed Kaleemullah
, S. Ramsubramanian
, et al.
·
Solid State Communications
·
11
Investigations of cobalt and carbon codoping in gallium nitride for spintronic applications
2011
·
S. Munawar Basha
, S. Ramasubramanian
, et al.
·
Journal of Magnetism and Magnetic Materials
·
10
Micro Raman analysis on the impact of light ion irradiation of hydride vapor-phase epitaxy grown gallium nitride epilayers
2022
·
P Atheek
, P Puviarasu
, et al.
·
Thin Solid Films
·
9
Impact of swift heavy ion irradiation on as-grown gallium nitride epilayers by MOCVD technique
2023
·
P. Atheek
, P. Puviarasu
, et al.
·
Radiation Physics and Chemistry
·
8
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)
2015
·
L. Ravikiran
, K. Radhakrishnan
, et al.
·
Journal of Applied Physics
·
8
Role of micro-Raman technique in material characterization of GaN wide bandgap semiconductor: Review
2025
·
P. Atheek
, P. Puviarasu
, et al.
·
Progress in Crystal Growth and Characterization of Materials
·
6
Structural and Magnetic Properties of Fe-Doped GaN by Sol-Gel Technique
2020
·
P. Muzammil
, S. Munawar Basha
, et al.
·
Journal of Superconductivity and Novel Magnetism
·
6
Synthesis of GaN fibers by varying precursor concentrations using Electrospinning method
2019
·
P. Muzammil
, S. Munawar Basha
, et al.
·
Optik
·
4
Effect of growth temperature on gallium nitride nanostructures using HVPE technique
2012
·
S. Munawar Basha
, S.R. Ryu
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
4
Effect of precursors condition on the structural morphology of synthesized GaN
2018
·
P. Muzammil
, S. Munawar Basha
, et al.
·
AIP conference proceedings
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Works count:
15
Citation count:
150
H-index:
8
I10-index:
7
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