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Atsuki Hidaka

ORCID: 0009-0001-1266-167X
Observed ORCID: 0009-0001-1266-167X
OpenAlex ID: A5064213911
Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
2019 · Hideharu Matsuura, Akinobu Takeshita, et al. · Japanese Journal of Applied Physics · 21
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Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration
2018 · Hideharu Matsuura, Akinobu Takeshita, et al. · Applied Physics Express · 20
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Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
2018 · Hideharu Matsuura, Akinobu Takeshita, et al. · Materials science forum · 13
Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC
2020 · Hideharu Matsuura, Akinobu Takeshita, et al. · Japanese Journal of Applied Physics · 12
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Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
2019 · Hideharu Matsuura, Rinya Nishihata, et al. · Materials science forum · 10
Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC
2021 · Hideharu Matsuura, Yuki Kondo, et al. · Japanese Journal of Applied Physics · 9
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Electrical Properties of Heavily Al-Doped 4H-SiC
2023 · Hideharu Matsuura, Akinobu Takeshita, et al. · Materials science forum · 7
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Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition
2023 · Atsuki Hidaka, Yuki Kondo, et al. · Japanese Journal of Applied Physics · 6
Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
2020 · Atsuki Hidaka, Akinobu Takeshita, et al. · Materials science forum · 6
Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC
2023 · Hideharu Matsuura, Atsuki Hidaka, et al. · Journal of Applied Physics · 5
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Correlation between variable-range hopping conduction and lattice strain in heavily Al-doped 4H-SiC epilayers
2025 · Hideharu Matsuura, Yuki Kondo, et al. · Japanese Journal of Applied Physics · 3
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Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition
2025 · Atsuki Hidaka, Yuuta Tokai, et al. · Japanese Journal of Applied Physics · 3
Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer
2015 · Hideharu Matsuura, Shungo Sakurai, et al. · Sensors · 3
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Corrigendum: “Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC” [Jpn. J. Appl. Phys. 59 , 051004 (2020)]
2020 · Hideharu Matsuura, Akinobu Takeshita, et al. · Japanese Journal of Applied Physics · 1
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Physical picture of nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC
2026 · Hideharu Matsuura, Tomoya Narita, et al. · Japanese Journal of Applied Physics
Low-temperature transition from band conduction to nearest-neighbor hopping conduction in heavily Al-doped 4H-SiC epilayers
2026 · Hideharu Matsuura, Tomoya Narita, et al. · Japanese Journal of Applied Physics
Anomalous Conduction in Heavily Al-Doped p-Type 4H-SiC with Al Concentration of First Half of 10 19 cm -3
2020 · Atsuki Hidaka, Akinobu Takeshita, et al. · The Japan Society of Applied Physics
Electrical Resistivity and Hall Coefficient in Al-Doped p-Type 4H-SiC Epilayers with Al Concentration of First Half of 10 20 cm -3 .
2020 · Yuki Kondo, Akinobu Takeshita, et al. · The Japan Society of Applied Physics
Anomalous Conduction Mechanism between Band and Nearest-Neighbor-Hopping Conduction in Heavily Al-doped p-type 4H-SiC
2019 · Atsuki Hidaka · ICSCRM2019 Organizing Committee
Comparison of Activation Energies of Hall Coefficient and Resistivity in Heavily Al-doped 4H-SiC
2018 · Rinya Nishihata, Akinobu Takeshita, et al. · The Japan Society of Applied Physics
Influence of N Codoping on Resistivity in Heavily Al-doped p-type 4H-SiC
2018 · Atsuki Hidaka, Akinobu Takeshita, et al. · The Japan Society of Applied Physics
Conduction mechanisms in heavily Al-doped 4H-SiC epilayers -- Dependencies of resistivity on Al concentration and temperature
2017 · S. Ozawa, Akinobu Takeshita, et al. · IEICE Technical Report; IEICE Tech. Rep.
Larger Active Area Gated Silicon Drift Detector Using Thick Si Wafer
2016 · Shohei Ishikawa, Shinya Hukushima, et al. · The Japan Society of Applied Physics
Thicker and Larger Effective Area of Gated Silicon Drift Detector Using a Low-Resistivity Wafer
2016 · Akinobu Takeshita, Shungo Sakurai, et al. · The Japan Society of Applied Physics
Possibility of gated silicon drift detector detecting hard x-ray
2015 · Hideharu Matsuura, Shinya Fukushima, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Works count: 26
Citation count: 119
H-index: 7
I10-index: 5
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