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Jan V Grahn

Observed names: Grahn, J., Grahn, Jan, J Grahn, J. Grahn, J. V. GRAHN, J. V. Grahn, J.V Grahn, J.V. Grahn, Jan Grahn, Jan V. Grahn, Vilhelm Grahn, Jan
Observed institutions: Centre National de la Recherche Scientifique, Université de Lille, RISE Research Institutes of Sweden, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Chalmers University of Technology, KTH Royal Institute of Technology
ORCID: 0000-0002-5439-870X
Observed ORCID: 0000-0002-5439-870X
OpenAlex ID: A5064408417
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
2012 · J. Schleeh, G. Alestig, et al. · IEEE Electron Device Letters · 125
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Phonon black-body radiation limit for heat dissipation in electronics
2014 · J. Schleeh, J. Mateos, et al. · Nature Materials · 94
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
2020 · Eunjung Cha, Niklas Wadefalk, et al. · IEEE Electron Device Letters · 83
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
2018 · Eunjung Cha, Niklas Wadefalk, et al. · IEEE Transactions on Microwave Theory and Techniques · 66
Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications
2013 · Joel Schleeh, Niklas Wadefalk, et al. · IEEE Transactions on Microwave Theory and Techniques · 52
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
2013 · Andreas Westlund, Paul Sangaré, et al. · Applied Physics Letters · 50
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Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
2012 · J. Schleeh, H. Rodilla, et al. · IEEE Transactions on Electron Devices · 49
Linearization of Efficiency-Optimized Dynamic Load Modulation Transmitter Architectures
2010 · Haiying Cao, Hossein Mashad Nemati, et al. · IEEE Transactions on Microwave Theory and Techniques · 47
Graphene self-switching diodes as zero-bias microwave detectors
2015 · A. Westlund, M. Winters, et al. · Applied Physics Letters · 44
A 300-µW Cryogenic HEMT LNA for Quantum Computing
2020 · Eunjung Cha, Niklas Wadefalk, et al. · IEEE MTT-S International Microwave Symposium digest · 40
Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications
2008 · M. Malmkvist, E. Lefebvre, et al. · IEEE Transactions on Microwave Theory and Techniques · 40
In situ growth of evaporated TiO2 thin films using oxygen radicals: Effect of deposition temperature
1998 · J. V. Grahn, M. Linder, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 39
An SiC MESFET-Based MMIC Process
2006 · Mattias Sudow, Kristoffer Andersson, et al. · IEEE Transactions on Microwave Theory and Techniques · 37
Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals
1998 · J. V. Grahn, P.-E. Hellberg, et al. · Journal of Applied Physics · 34
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
2017 · Eunjung Cha, Giuseppe Moschetti, et al. · IEEE Transactions on Microwave Theory and Techniques · 33
Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation
2023 · Eunjung Cha, Niklas Wadefalk, et al. · IEEE Transactions on Electron Devices · 31
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
2012 · G. Moschetti, N. Wadefalk, et al. · IEEE Microwave and Wireless Components Letters · 29
Gate-Recess Technology for InAs/AlSb HEMTs
2009 · Eric Lefebvre, Mikael Malmkvist, et al. · IEEE Transactions on Electron Devices · 26
Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers
2017 · Mark A. McCulloch, Jan Grahn, et al. · Journal of Astronomical Telescopes Instruments and Systems · 24
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Anisotropic transport properties in InAs/AlSb heterostructures
2010 · G. Moschetti, H. Zhao, et al. · Applied Physics Letters · 24
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Sb-HEMT: Toward 100-mV Cryogenic Electronics
2010 · Albert Noudeviwa, Yannick Roelens, et al. · IEEE Transactions on Electron Devices · 24
A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
2000 · J.V Grahn, H Fosshaug, et al. · Solid-State Electronics · 24
Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
2022 · Junjie Li, Arsalan Pourkabirian, et al. · IEEE Electron Device Letters · 23
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Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate
2013 · J. Schleeh, H. Rodilla, et al. · Solid-State Electronics · 23
Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement
2000 · M. Linder, F. Ingvarson, et al. · IEEE Transactions on Semiconductor Manufacturing · 23
Works count: 189
Citation count: 1,835
H-index: 23
I10-index: 55
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