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Harshit Agarwal
Observed names:
Agarwal, Harshit,
H. Agarwal
Institution:
Indian Institute of Technology Jodhpur
Observed institutions:
Indian Institute of Technology Jodhpur,
National Institute of Technology Hamirpur,
Texas Instruments (United States),
Indian Institute of Technology Kanpur,
University of California, Berkeley
ORCID:
0000-0003-4200-5654
Observed ORCID:
0000-0003-4200-5654
OpenAlex ID:
A5064552337
BSIM6: Analog and RF Compact Model for Bulk MOSFET
2014
·
Yogesh Singh Chauhan
, Sriramkumar Venugopalan
, et al.
·
IEEE Transactions on Electron Devices
·
134
BSIM-CMG: Standard FinFET compact model for advanced circuit design
2015
·
Juan P. Duarte
, Sourabh Khandelwal
, et al.
·
European Solid-State Circuits Conference (ESSCIRC)
·
117
Engineering Negative Differential Resistance in NCFETs for Analog Applications
2018
·
Harshit Agarwal
, Pragya Kushwaha
, et al.
·
IEEE Transactions on Electron Devices
·
107
Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors
2019
·
Harshit Agarwal
, Pragya Kushwaha
, et al.
·
IEEE Electron Device Letters
·
98
BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs
2020
·
Avirup Dasgupta
, Shivendra Singh Parihar
, et al.
·
IEEE Transactions on Electron Devices
·
70
Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs
2019
·
Yen-Kai Lin
, Harshit Agarwal
, et al.
·
IEEE Transactions on Electron Devices
·
47
Spacer Engineering in Negative Capacitance FinFETs
2019
·
Yen-Kai Lin
, Harshit Agarwal
, et al.
·
IEEE Electron Device Letters
·
46
Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node
2019
·
Pragya Kushwaha
, Harshit Agarwal
, et al.
·
IEEE Electron Device Letters
·
46
NCFET Design Considering Maximum Interface Electric Field
2018
·
Harshit Agarwal
, Pragya Kushwaha
, et al.
·
IEEE Electron Device Letters
·
44
Compact Model for Geometry Dependent Mobility in Nanosheet FETs
2020
·
Avirup Dasgupta
, Shivendra Singh Parihar
, et al.
·
IEEE Electron Device Letters
·
38
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
2019
·
H. Agarwal
, C. Gupta
, et al.
·
IEEE Transactions on Electron Devices
·
37
Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor
2018
·
Ming-Yen Kao
, Angada B. Sachid
, et al.
·
IEEE Transactions on Electron Devices
·
37
Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance
2018
·
Harshit Agarwal
, Pragya Kushwaha
, et al.
·
IEEE Transactions on Electron Devices
·
36
A Novel Physics Aware ANN-Based Framework for BSIM-CMG Model Parameter Extraction
2024
·
Anant Singhal
, Girish Pahwa
, et al.
·
IEEE Transactions on Electron Devices
·
31
Modeling the impact of substrate depletion in FDSOI MOSFETs
2014
·
Pragya Kushwaha
, Navid Paydavosi
, et al.
·
Solid-State Electronics
·
30
Recent enhancements in BSIM6 bulk MOSFET model
2013
·
H. Agarwal
, S. Venugopalan
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
29
Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices
2021
·
Siying Zheng
, Jiuren Zhou
, et al.
·
IEEE Electron Device Letters
·
28
Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model
2015
·
Harshit Agarwal
, Chetan Gupta
, et al.
·
IEEE Journal of the Electron Devices Society
·
27
PDF
Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel
2019
·
Ming-Yen Kao
, Yen-Kai Lin
, et al.
·
IEEE Electron Device Letters
·
26
BSIM compact MOSFET models for SPICE simulation
2013
·
Yogesh Singh Chauhan
, Sriram Venugopalan
, et al.
·
International Conference Mixed Design of Integrated Circuits and Systems
·
25
Robust Compact Model of High-Voltage MOSFET’s Drift Region
2022
·
Girish Pahwa
, Ayushi Sharma
, et al.
·
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
·
24
Modeling of Advanced RF Bulk FinFETs
2018
·
P. Kushwaha
, H. Agarwal
, et al.
·
IEEE Electron Device Letters
·
24
Fabrication and Modeling of Flexible High-Performance Resistive Switching Devices With Biomaterial Gelatin/Ultrathin HfOx Hybrid Bilayer
2022
·
Anurag Dwivedi
, Anil Lodhi
, et al.
·
IEEE Transactions on Electron Devices
·
22
Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs
2015
·
Harshit Agarwal
, Sourabh Khandelwal
, et al.
·
IEEE Journal of the Electron Devices Society
·
22
PDF
Compact Modeling Source-to-Drain Tunneling in Sub-10-nm GAA FinFET With Industry Standard Model
2017
·
Yen-Kai Lin
, Juan Pablo Duarte
, et al.
·
IEEE Transactions on Electron Devices
·
21
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Works count:
112
Citation count:
1,674
H-index:
22
I10-index:
46
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