Author

Claude J. Sandroff

Observed names: C. J. SANDROFF, C. J. Sandroff, C.J Sandroff, C.J. Sandroff

Observed institutions: Stevens Institute of Technology, AT&T (United States), Core Competence, Indian Institute of Science Bangalore, Brandeis University, ExxonMobil (United States)

OpenAlex ID: A5064866431

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

1987 · C. J. Sandroff, R. N. Nottenburg, et al. · Applied Physics Letters · 723

Nearly ideal electronic properties of sulfide coated GaAs surfaces

1987 · E. Yablonovitch, C. J. Sandroff, et al. · Applied Physics Letters · 347

Effects of passivating ionic films on the photoluminescence properties of GaAs

1987 · B. J. Skromme, C. J. Sandroff, et al. · Applied Physics Letters · 228

Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds

1989 · C. J. Sandroff, M. S. Hegde, et al. · Applied Physics Letters · 181

Surface-enhanced Raman study of organic sulfides adsorbed on silver: facile cleavage of sulfur-sulfur and carbon-sulfur bonds

1982 · C. J. Sandroff, D. R. Herschbach · The Journal of Physical Chemistry · 159

Colloidal aggregation revisited: New insights based on fractal structure and surface-enhanced Raman scattering

1985 · D.A. Weitz, M.Y. Lin, et al. · Surface Science · 155

Carrier confinement and special crystallite dimensions in layered semiconductor colloids

1986 · C. J. Sandroff, D. M. Hwang, et al. · Physical review. B, Condensed matter · 142

Structure and stability of passivating arsenic sulfide phases on GaAs surfaces

1989 · C. J. Sandroff, M. S. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 110

Clusters in solution: Growth and optical properties of layered semiconductors with hexagonal and honeycombed structures

1986 · C. J. Sandroff, S. P. Kelty, et al. · The Journal of Chemical Physics · 94

Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions

1990 · C. J. Sandroff, M. S. Hegde, et al. · Journal of Applied Physics · 92

Polymer adsorption on colloidal particles

1984 · P.A. Pincus, C.J. Sandroff, et al. · Journal de physique · 92

Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation

1987 · L. A. Farrow, C. J. Sandroff, et al. · Applied Physics Letters · 69

Surface-enhanced Raman study of the solid/liquid interface: Conformational changes in adsorbed molecules

1983 · C.J. Sandroff, S. Garoff, et al. · Chemical Physics Letters · 62

Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth

1988 · R. N. Nottenburg, C. J. Sandroff, et al. · Applied Physics Letters · 57

Quantum effects in anisotropic semiconductor clusters: colloidal suspensions of bismuth sesquisulfide and antimony sesquisulfide

1987 · B. F. Variano, D. M. Hwang, et al. · The Journal of Physical Chemistry · 52

Kinetics of displacement and charge transfer reactions probed by SERS: evidence for distinct donor and acceptor sites on colloidal gold surfaces

1985 · Claude J. Sandroff, D. R. Herschbach · Langmuir · 46

GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy

1989 · C. J. Sandroff, J. P. Harbison, et al. · Science · 38

Improvements in electrostatic discharge performance of InGaAsP semiconductor lasers by facet passivation

1992 · L.F. DeChiaro, C.J. Sandroff · IEEE Transactions on Electron Devices · 36

Charge transfer from tetrathiafulvalene to silver and gold surfaces studied by surface-enhanced Raman scattering

1983 · C. J. Sandroff, D. A. Weitz, et al. · The Journal of Physical Chemistry · 32

Investigation of finite size effects in a first order phase transition: High pressure Raman study of CdS microcrystallites

1988 · B. F. Variano, N. E. Schlotter, et al. · The Journal of Chemical Physics · 31

High-pressure study of the liquid/solid interface: surface-enhanced Raman scattering from adsorbed molecules

1984 · C. J. Sandroff, H. E. King, et al. · The Journal of Physical Chemistry · 31

Thermal and chemical stability of Se-passivated GaAs surfaces

1990 · F. S. Turco, C. J. Sandroff, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 26

Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed by in situ photoluminescence

1991 · C. J. Sandroff, F. S. Turco-Sandroff, et al. · Journal of Applied Physics · 19

Aggregated microcrystallites: Raman scattering from a new class of disordered solids

1986 · C.J. Sandroff, L.A. Farrow · Chemical Physics Letters · 19

Imaging of colloidal gold on graphite by scanning tunneling microscopy: Isolated particles, aggregates, and ordered arrays

1991 · J. F. Womelsdorf, W. C. Ermler, et al. · The Journal of Physical Chemistry · 17

Works count: 55

Citation count: 3,033

H-index: 22

I10-index: 34