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Author

Wen-Yueh Jang

Observed names: W. Jang, Wen‐Yueh Jang
Institution: Powerchip (Taiwan)
ORCID: 0009-0003-6643-9104
Observed ORCID: 0009-0003-6643-9104
OpenAlex ID: A5065698788
Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film
2005 · Chih-Yi Liu, Pei-Hsun Wu, et al. · IEEE Electron Device Letters · 106
Self-rectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory
2013 · Chung-Wei Hsu, I‐Ting Wang, et al. · Symposium on VLSI Technology · 96
Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM
2011 · Ming-Chi Wu, Yi-Wei Lin, et al. · IEEE Electron Device Letters · 96
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
2015 · Umesh Chand, Chun-Yang Huang, et al. · Applied Physics Letters · 82
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
2012 · Ming-Chi Wu, Wen-Yueh Jang, et al. · Semiconductor Science and Technology · 81
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Flexible One Diode–One Resistor Crossbar Resistive-Switching Memory
2012 · Jiun-Jia Huang, Tuo-Hung Hou, et al. · Japanese Journal of Applied Physics · 61
A new experimental method to determine the saturation voltage of a small-geometry MOSFET
1988 · Wen-Yueh Jang, Chung-Yu Wu, et al. · Solid-State Electronics · 42
3D vertical TaOx/TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current
2013 · Chung-Wei Hsu, Chia-Chen Wan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 34
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
2013 · Kuan-Liang Lin, Tuo-Hung Hou, et al. · Japanese Journal of Applied Physics · 26
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Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
2006 · Chih-Yi Liu, Arthur Wang, et al. · Journal of Physics D Applied Physics · 22
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Memory effect of sol–gel derived V-doped SrZrO3 thin films
2005 · Chih-Yi Liu, Chun-Chieh Chuang, et al. · Thin Solid Films · 18
Two-Transistor Metal-Ferroelectric-Metal Field- Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling
2023 · Ming-Hung Wu, Chen-Yi Cho, et al. · IEEE Transactions on Electron Devices · 7
Low-IRESET unipolar HfO2 RRAM and tunable resistive-switching mode via interface engineering
2011 · Kuan-Liang Lin, Tuo-Hung Hou, et al. · International Semiconductor Device Research Symposium · 7
A Novel Multi-Functional Silicon-On-ONO (SOONO) MOSFETs for SoC Applications: Electrical Characterization for High Performance Transistor and Embedded Memory Applications
2006 · C. Oh, S. Kim, et al. · Symposium on VLSI Technology · 7
MgO/HZO Based Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications
2023 · Hsin-Hsueh Lin, Chao-Cheng Lin, et al. · IEEE Electron Device Letters · 6
Performances of AlGaN/GaN MIS-HEMT with Low-Temperature Sputtering-Deposited AlBN as Gate Dielectric and Passivation Layer
2025 · Hsiang Chou, Kuan-Lun Chen, et al. · ECS Journal of Solid State Science and Technology · 4
Enhancing spin–orbit torque in tri-layer devices with an ultra-thin light metal spacer
2025 · Durgesh Kumar Ojha, Liang-Juan Chang, et al. · Applied Physics Letters · 3
Two-Transistor Metal–Ferroelectric–Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part II: Experiment
2023 · Ming-Hung Wu, Chen-Yi Cho, et al. · IEEE Transactions on Electron Devices · 3
MOS device parameter optimization based on transient trajectory considerations
1990 · Chung-Yu Wu, Wen-Yueh Jang, et al. · Solid-State Electronics · 2
Characteristics of GaN MIS-HEMT with ZrO 2 /HfO 2 Superlattice Gate Dielectric Layer
2026 · Kuan-Lun Chen, Hsiang Chou, et al. · ECS Journal of Solid State Science and Technology · 1
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Low Temperature (< 200 oC) Fabrication of InGaSnOx (IGTO) TFTs for Integration on Low-Thermal Budget Platforms Guan-Han Lin1,3, Dai Loi Vu 2, Yu-Ying Lin2, Kai-Sheng Lin2, Hsiang-Chao Yang1, Tsung-Te Chou3, Chi-Chung Kei3, Wen-Yueh Jang4, Shou-Zen Chang4, and Chun-Hsiung Lin2
2026 · Guan-Han Lin, Dai Loi Vu, et al. · International Conference on Solid State Devices and Materials (SSDM)
Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications
2026 · Chen‐Yi Cho, Ming‐Hung Wu, et al. · Advanced Materials Technologies
Fluorine Penetration Suppression By Applying Amorphous Silicon In Wsi Gate Process
2005 · Han-Ching Wang, Chtm-Hsing Shih, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Works count: 23
Citation count: 704
H-index: 11
I10-index: 11
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