Author

J. F. Nützel

Observed names: J F Nutzel, J Nutzel, J Nützel, J. F. Nutzel, J. Nutzel, J. NÜtzel, J. Nützel, J.F Nützel, J.F. Nützel, Joachim F. Nützel, Joachim Nützel

Institution: Technical University of Munich

Observed institutions: Johannes Kepler University of Linz, IBM (United States), Infineon Technologies (Germany), Masaryk University, Technical University of Munich

OpenAlex ID: A5066534149

Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

1995 · P. Schittenhelm, M. Gail, et al. · Applied Physics Letters · 176

Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy

1996 · J. Stimmer, A. Reittinger, et al. · Applied Physics Letters · 146

Hole energy levels and intersubband absorption in modulation-doped Si/ Si1−x Gex multiple quantum wells

1994 · T. Fromherz, E. Koppensteiner, et al. · Physical review. B, Condensed matter · 100

Segregation and diffusion on semiconductor surfaces

1996 · J. F. Nützel, G. Abstreiter · Physical review. B, Condensed matter · 68

Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

1996 · P. Kruck, M. Helm, et al. · Applied Physics Letters · 60

Second-harmonic generation in asymmetric Si/SiGe quantum wells

1994 · M. Seto, M. Helm, et al. · Applied Physics Letters · 41

Oblique roughness replication in strained SiGe/Si multilayers

1998 · V. Holý, A. A. Darhuber, et al. · Physical review. B, Condensed matter · 37

PDF

Comparison of P and Sb as n-dopants for Si molecular beam epitaxy

1995 · J. F. Nützel, G. Abstreiter · Journal of Applied Physics · 34

Phosphorous doping in low temperature silicon molecular beam epitaxy

1992 · E. Friess, J. Nützel, et al. · Applied Physics Letters · 32

Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

1996 · T. Fromherz, P. Kruck, et al. · Applied Physics Letters · 26

Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy

1993 · J. Brunner, J. Nützel, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23

Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

1995 · J.F. Nützel, C.M. Engelhardt, et al. · Journal of Crystal Growth · 18

Electrostatically defined quantum dots in a Si/SiGe heterostructure

2010 · A Wild, J Sailer, et al. · New Journal of Physics · 17

PDF

X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

1998 · V Holý, A A Darhuber, et al. · Semiconductor Science and Technology · 17

PDF

Optical study of diffusion limitation in MBE growth of SiGe quantum wells

1995 · M Gail, J Brunner, et al. · Semiconductor Science and Technology · 11

PDF

A 0.18 μm logic-based MRAM technology for high performance nonvolatile memory applications