Work

Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

Year: 1995

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.114401

Authors: P. Schittenhelm, M. Gail, J. Brunner, J. F. Nützel, G. Abstreiter

Institution: Technical University of Munich

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2004703058

FWCI: 10.71

Cites:

Cited by: 176

Related to: 10