Author

M. Gail

Observed names: M Gail, Marcus Gail

Institutions: Lund University, Technical University of Munich

Observed institutions: Lund University, Technical University of Munich

OpenAlex ID: A5110059616

Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

1995 · P. Schittenhelm, M. Gail, et al. · Applied Physics Letters · 176

Self-organized MBE growth of Ge-rich SiGe dots on Si(100)

1995 · P. Schittenhelm, M. Gail, et al. · Journal of Crystal Growth · 47

Photoluminescence studies of Si/Si1 − xGex quantum wells and SimGen superlattices

1992 · U. Menczigar, J. Brunner, et al. · Thin Solid Films · 32

Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy

1992 · J. Brunner, U. Menczigar, et al. · Thin Solid Films · 31

Room-temperature photoluminescence of GemSinGem structures

1995 · M. Gail, G. Abstreiter, et al. · Applied Physics Letters · 25

Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy

1993 · J. Brunner, J. Nützel, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23

Photo- and electroluminescence in short-period Si/Ge superlattice structures

1994 · J Olajos, J Engvall, et al. · Semiconductor Science and Technology · 15

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Optical study of diffusion limitation in MBE growth of SiGe quantum wells

1995 · M Gail, J Brunner, et al. · Semiconductor Science and Technology · 11

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Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

1993 · M. Gail, J. Brunner, et al. · MRS Proceedings · 11

Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells

1996 · Janos Olajos, Jesper Engvall, et al. · Physical review. B, Condensed matter · 10

Room-temperature luminescence from single quantum well diodes grown by molecular beam epitaxy

1995 · H. Presting, T. Zinke, et al. · Journal of Crystal Growth · 9

Influence of growth conditions on the photoluminescence of pseudomorphic MBE grown Si1-xGex quantum wells

1993 · J. Brunner, U. Menczigar, et al. · Journal of Crystal Growth · 9

SiGe quantum wells on (110) Si grown by molecular beam epitaxy

1995 · J. Brunner, M. Gail, et al. · Journal of Crystal Growth · 8

Local epitaxy of Si/SiGe wires and dots

1995 · J. Brunner, W. Jung, et al. · Journal of Crystal Growth · 5

Diffusion Effects and Luminescence in Thin SiGe/Si Layers

1995 · M Gail, W. Jung, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4

Local epitaxy of Si/SiGe wires and dots

1996 · J. Brunner, W. Jung, et al. · Elsevier eBooks

Self-organized MBE growth of Ge-rich SiGe dots on Si(100)

1996 · P. Schittenhelm, M. Gail, et al. · Elsevier eBooks

Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy

1996 · H. Presting, T. Zinke, et al. · Elsevier eBooks

Works count: 18

Citation count: 416

H-index: 10

I10-index: 10