Work

SiGe quantum wells on (110) Si grown by molecular beam epitaxy

Year: 1995

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(95)80099-x

Authors: J. Brunner, M. Gail, G. Abstreiter, P. Vogl

Institution: Technical University of Munich

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2090773689

FWCI: 1.397

Cites: 8

Cited by: 8

Related to: 10