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Author

Hugues Marchand

Observed names: H Marchand, H. Marchand
ORCID: 0000-0002-0401-4018
Observed ORCID: 0000-0002-0401-4018
OpenAlex ID: A5066658072
Electrical characterization of GaN p-n junctions with and without threading dislocations
1998 · P. Kozodoy, J. P. Ibbetson, et al. · Applied Physics Letters · 359
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
1999 · G. Parish, S. Keller, et al. · Applied Physics Letters · 319
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
1998 · H. Marchand, X. H. Wu, et al. · Applied Physics Letters · 238
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
2001 · H. Marchand, L. Zhao, et al. · Journal of Applied Physics · 185
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 · S. F. Chichibu, H. Marchand, et al. · Applied Physics Letters · 168
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
1999 · H. Marchand, N. Zhang, et al. · MRS Internet Journal of Nitride Semiconductor Research · 118
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High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
1999 · P. Fini, L. Zhao, et al. · Applied Physics Letters · 112
Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
1997 · H. Marchand, P. Desjardins, et al. · Applied Physics Letters · 102
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
1998 · H. Marchand, J.P. Ibbetson, et al. · Journal of Crystal Growth · 100
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
2000 · P Fini, H Marchand, et al. · Journal of Crystal Growth · 94
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
1999 · S. J. Rosner, G. Girolami, et al. · Applied Physics Letters · 90
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
1998 · H. Marchand, J.P. Ibbetson, et al. · MRS Internet Journal of Nitride Semiconductor Research · 82
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Thermal conductivity of lateral epitaxial overgrown GaN films
1999 · C.-Y. Luo, H. Marchand, et al. · Applied Physics Letters · 63
Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging
2020 · Georges Pavlidis, Luke Yates, et al. · IEEE Transactions on Electron Devices · 37
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
2000 · A. R. Stonas, P. Kozodoy, et al. · Applied Physics Letters · 37
10 Gb/s Mach-Zehnder modulator integrated with widely-tunable sampled grating DBR laser
2004 · Yuliya Akulova, G.A. Fish, et al. · Optical Fiber Communication Conference · 22
Monolithic chemical sensor using heterodyned sampledgrating DBRlasers
2001 · D.A. Cohen, E.J. Skogen, et al. · Electronics Letters · 22
Low-Loss Coplanar Waveguides on GaN-on-Si Substrates
2018 · Lina Cao, Chien-Fong Lo, et al. · IEEE Microwave and Wireless Components Letters · 19
Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire
1999 · P. Fini, H. Marchand, et al. · MRS Proceedings · 18
Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process
1998 · H. Marchand, J.P. Ibbetson, et al. · MRS Proceedings · 15
Band alignment engineering for high speed, low drive field quantum-confined Stark effect devices
1998 · R. Y.-F. Yip, P. Desjardins, et al. · Journal of Applied Physics · 13
Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV
2022 · Kazuki Nomoto, Wenshen Li, et al. · Applied Physics Letters · 10
Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)
1997 · P. Desjardins, H. Marchand, et al. · Journal of Applied Physics · 10
Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
1999 · H. Marchand, J.P. Ibbetson, et al. · MRS Internet Journal of Nitride Semiconductor Research · 9
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Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)
1997 · H. Marchand, P. Desjardins, et al. · Journal of Electronic Materials · 9
Works count: 48
Citation count: 2,300
H-index: 18
I10-index: 23
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