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Venkata Vanukuru
Observed names:
V. Vanukuru,
Venkat Vanukuru
OpenAlex ID:
A5067087897
415/610GHz fT/fMAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process
2022
·
Vibhor Jain
, John Pekarik
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
22
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz
2022
·
U. S. Raghunathan
, S. Sirohi
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
21
A new 45nm RFSOI Technology Optimized for Low Power, High Performance mmWave Applications
2024
·
Sameer H. Jain
, R. Mullapudi
, et al.
·
European Microwave Integrated Circuits Conference
·
4
A 7.1 GHz +23.7 dBm OIP3 1-dB NF Cascode LNA for next-generation Wi-Fi using a 130 nm SOI CMOS Technology
2024
·
Indrajit Das
, Hari Kishore Kakara
, et al.
·
International Conference on VLSI Design
·
4
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems
2022
·
Alvin Joseph
, Vibhor Jain
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
4
A 18.4 dB Gain 0.95 dB NF Ku-Band LNA Design using 130 nm Bulk CMOS Technology
2024
·
Indrajit Das
, Hari Kishore Kakara
, et al.
·
Asia-Pacific Microwave Conference (APMC)
·
3
A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS
2024
·
Hari Kishore Kakara
, Indrajit Das
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
3
LNFET device with 325/475GHz $f_{\mathrm{T}}/f_{\text{MAX}}$ and 0.47dB NFMIN at 20GHz for SATCOM applications in 45nm PDSOI CMOS
2022
·
S.V. Khokale
, T. Ethirajan
, et al.
·
Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
·
3
Design of Single-Ended and Differential Power Amplifiers using SiGe HBT for SATCOM Applications
2023
·
Santosh Kumar Gedela
, Binoy Kumar Paul
, et al.
·
IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)
·
2
Improved Bias Scheme for High Power RF Switches Using 130 nm RF-SOI Technology
2024
·
Raghuram Tattamangalam Raman
, Venkata Vanukuru
·
Asia-Pacific Microwave Conference (APMC)
·
1
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers
2023
·
Prateek Kumar Sharma
, Vaibhav Ruparelia
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
1
A 0.92 dB NF 13 GHz Low Noise Amplifier for 6G FR3 Applications in 90 nm SOI CMOS
2025
·
Indrajit Das
, Hari Kishore Kakara
, et al.
·
IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)
A +24.6 dBm OIP3 0.66 dB NF 5.7 GHz LNA using Post-Distortion Linearization Technique
2025
·
Indrajit Das
, Sergiton David
, et al.
·
IEEE International Conference on Emerging Electronics (ICEE)
A 14 GHz, 16 dBm Power Amplifier with 50% PAE in 130-nm CMOS for SATCOM Applications
2024
·
Kishore Bantupalli
, Santosh Kumar Gedela
, et al.
·
IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)
Experimental Studies of Extended Drain MOSFET in 130-nm SOI Technology for Power Amplifier Design
2024
·
Binoy Kumar Paul
, Santosh Kumar Gedela
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
A 12 GHz 17.5 dB Gain 0.8 dB NF Cascode LNA in 130 nm CMOS for Satellite Communication
2023
·
Indrajit Das
, Hari Kishore Kakara
, et al.
·
International Conference on Computers and Devices for Communication
Design and Optimization of BiCMOS SiGe PA for Millimeter-Wave Applications
2023
·
Sujata Ghosh
, Sanotosh Kumar Gedela
, et al.
·
IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)
Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers
2023
·
Venkata Vanukuru
, Hari Kakara
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
RWW 2022 Workshops [RWW 2022]
2021
·
Vaclav Valenta
, Venkata Vanukuru
·
IEEE Microwave Magazine
PDF
RWW 2021 Workshops [RWW 2021]
2020
·
Venkata Vanukuru
, Vaclav Valenta
·
IEEE Microwave Magazine
PDF
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Works count:
20
Citation count:
68
H-index:
4
I10-index:
2
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