Author

Seungwon Go

Institution: Sogang University

Observed institutions: Sogang University, Ajou University

ORCID: 0000-0003-3679-6381

Observed ORCID: 0000-0003-3679-6381

OpenAlex ID: A5067362607

Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact

2022 · Seok Jung Kang, Jang Hyun Kim, et al. · IEEE Transactions on Electron Devices · 55

Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

2024 · Jingyu Park, Seungwon Go, et al. · Scientific Reports · 13

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A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor

2021 · Shinhee Kim, Jae Yeon Park, et al. · Solid-State Electronics · 8

Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET)

2022 · Seungwon Go, Shinhee Kim, et al. · Solid-State Electronics · 6

Simulation study about negative capacitance effects on recessed channel tunnel FET

2021 · Shinhee Kim, Seungwon Go, et al. · Japanese Journal of Applied Physics · 5

Impact of Al-Doping on Ferroelectricity and Reliability of HfZrO Film Under High Temperature Annealing

2025 · Seonggeun Kim, Seungwon Go, et al. · IEEE Electron Device Letters · 4

One-Ferroelectric-Tunnel-FET-Based Reconfigurable Logic Gates

2025 · Jaemin Yeom, Minjeong Ryu, et al. · IEEE Transactions on Electron Devices · 4

Impact of Zr Precursor on Electrical Characteristics of HfZrO Laminated Structure

2024 · Seungwon Go, Hyungju Noh, et al. · IEEE Electron Device Letters · 3

Suppression of Reverse Drain-Induced Barrier Lowering in Negative Capacitance FETs Using a Hetero-Metal-Gate Structure

2025 · Jae Yeon Park, Seungwon Go, et al. · IEEE Access · 2

Design optimization of heterojunction 1T DRAM cell with SiGe body/drain for high performance

2022 · Seungwon Go, Shinhee Kim, et al. · Semiconductor Science and Technology · 1

Enhanced thermal robustness of laminated Hf0.5Zr0.5O2 ferroelectric film via Al2O3 mid-layer engineering

2026 · Seonggeun Kim, Seungwon Go, et al. · Applied Surface Science

Impact of Drain Bias on Degradation of Amorphous-InGaZnO Thin-Film Transistors

2026 · Jaewon Jang, Yun Seok Kye, et al. · IEEE Electron Device Letters

Single Ferroelectric Transistor Based In-Memory Hamiltonian Computation for Interaction-Centric Ising Machines

2026 · Seonggeun Kim, Seungwon Go, et al. · IEEE Electron Device Letters

Mechanical stability analysis of 3D nanosheet-stacked structure

2025 · Dong Keun Lee, Taegun Kim, et al. · Engineering Research Express

Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash

2025 · Yelim Jeon, Hyungju Noh, et al. · Solid-State Electronics

Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device

2025 · Seungwon Go, Sunwoo Lee, et al. · IEEE Transactions on Nanotechnology

Analysis of Bias Temperature Instability in Peripheral CMOS Devices for Low-Temperature Memory Applications

2025 · Jung Rae Cho, Seungwon Go, et al. · IEEE Access

Analysis of Transient Response of Negative Capacitance Field-Effect Transistor

2025 · Dong Keun Lee, Seungwon Go, et al. · IEEE Access

The Effect of Ferroelectric Dynamic Behavior on Negative Capacitance Field-Effect Transistor Inverter

2022 · Dongkeun Lee, Seungwon Go, et al. · International Conference on Electronics, Information, and Communication (ICEIC)

Investigation on the Effect of Gate Overlap/Underlap on the 1T DRAM Cell

2022 · Seungwon Go, Jae Yeon Park, et al. · International Conference on Electronics, Information, and Communication (ICEIC)

Works count: 21

Citation count: 101

H-index: 5

I10-index: 2