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Stéphane Burignat

Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel
2009 · S. Burignat, D. Flandre, et al. · Solid-State Electronics · 51
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
2009 · T. Rudenko, V. Kilchytska, et al. · Solid-State Electronics · 41
Retention in metal–oxide–semiconductor structures with two embedded self-aligned Ge-nanocrystal layers
2007 · S Duguay, S Burignat, et al. · Semiconductor Science and Technology · 24
Drain / substrate coupling impact on DIBL of Ultra Thin Body and BOX SOI MOSFETs with undoped channel
2009 · S. Burignat, M.K. Md Arshad, et al. · European Solid-State Device Research Conference · 16
Reversible Implementation of a Discrete Integer Linear Transformation.
2012 · Alexis De Vos, Stéphane Burignat, et al. · Ghent University Academic Bibliography (Ghent University) · 15
Analog/RF performance of sub-100 nm SOI MOSFETs with non-classical gate-source/drain underlap channel design
2010 · A. Kranti, Rashmi, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 15
Underlap channel UTBB MOSFETs for low—power analog/RF applications
2009 · A. Kranti, S. Burignat, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 12
Garbageless Reversible Implementation of Integer Linear Transformations
2013 · Stéphane Burignat, Kenneth Vermeirsch, et al. · Lecture notes in computer science · 10
Ultra-fine grain reconfigurability using CNTFETs
2007 · I. O'Connor, J. Liu, et al. · IEEE International Conference on Electronics, Circuits and Systems (ICECS) · 10
Test of a majority-based reversible (quantum) 4 bits ripple-carry adder in adiabatic calculation
2011 · Stéphane Burignat, Alexis De Vos · Ghent University Academic Bibliography (Ghent University) · 8
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Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX
2009 · Tamara Rudenko, Valeriya Kilchytska, et al. · Ghent University Academic Bibliography (Ghent University) · 7
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Structural properties of Ge-implanted SiO2 layers and related MOS memory effects
2005 · S. Duguay, A. Slaoui, et al. · Materials Science and Engineering B · 7
Quantitative study of charge trapping in SiO2 during bipolar Fowler–Nordheim injection
2003 · C. Busseret, N. Baboux, et al. · Journal of Non-Crystalline Solids · 6
A Review on Performances of Reversible Ripple-Carry Adders
2012 · Stéphane Burignat, Alexis De Vos · International Journal of Electronics and Telecommunications · 5
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Interfacing Reversible Pass-Transistor CMOS Chips with Conventional Restoring CMOS Circuits
2012 · Stéphane Burignat, Michael Kirkedal Thomsen, et al. · Lecture notes in computer science · 4
Towards the Limits of Cascaded Reversible (Quantum-Inspired) Circuits
2012 · Stéphane Burignat, Mariusz Olczak, et al. · Lecture notes in computer science · 3
Substrate Effects in sub-32 nm ultra thin SOI MOSFETs with thin buried oxide
2009 · Stéphane Burignat, Denis Flandre, et al. · Ghent University Academic Bibliography (Ghent University) · 3
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Mécanismes de transport, courants de fuite ultra-faibles et rétention dans les mémoires non volatiles à grille flottante
2004 · Stéphane Burignat · HAL · 3
Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells
2003 · N. Baboux, C. Busseret, et al. · Journal of Non-Crystalline Solids · 3
Designing Garbage-Free Reversible Implementations of the Integer Cosine Transform
2014 · Alexis De Vos, Stéphane Burignat, et al. · ACM Journal on Emerging Technologies in Computing Systems · 2
Capacitance and current–voltage simulation of EEPROM technology highly doped MOS structures
2003 · S. Croci, C. Plossu, et al. · Journal of Materials Science Materials in Electronics · 2
Energy Consumption by Reversible ircuits in the 130 nm and 65 nm Nodes
2014 · Stéphane Burignat, Alexis De Vos · Journal of Low Power Electronics · 1
Reversible computation, a quantum-inspired low-consumption viable technology?
2011 · Stéphane Burignat · Ghent University Academic Bibliography (Ghent University) · 1
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Reversible implementation of a disrete linear transformation
2010 · Alexis De Vos, Stéphane Burignat, et al. · Ghent University Academic Bibliography (Ghent University) · 1
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Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements
2007 · S. Burignat, C. Plossu, et al. · Journal of Non-Crystalline Solids · 1
Works count: 31
Citation count: 251
H-index: 9
I10-index: 9
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