Work

Capacitance and current–voltage simulation of EEPROM technology highly doped MOS structures

Year: 2003

Type: article

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1023/a:1023919811012

Authors: S. Croci, C. Plossu, S. Burignat, P. Boivin

Institutions: Centre National de la Recherche Scientifique, STMicroelectronics (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W207564800

FWCI:

Cites: 13

Cited by: 2

Related to: 10