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S. Croci
Observed names:
CROCI, Silvia,
Silvia Croci
Institutions:
Centre National de la Recherche Scientifique,
Institut National des Sciences Appliquées de Lyon,
University of Milano-Bicocca
Observed institutions:
Centre National de la Recherche Scientifique,
University of Milan,
Institut National des Sciences Appliquées de Lyon,
University of Milano-Bicocca
OpenAlex ID:
A5048879497
Decay kinetics and thermoluminescence of PbWO4: La3+
1997
·
M. Nikl
, P. Bohäc̆ek
, et al.
·
Applied Physics Letters
·
91
Radiation Damage and Thermoluminescence of Gd-Doped PbWO4
1997
·
S. Baccaro
, P. Bohacek
, et al.
·
physica status solidi (a)
·
38
Thermoluminescence (TL) dating of burnt flints: problems, perspectives and some examples of application
2001
·
Marco Martini
, Emanuela Sibilia
, et al.
·
Journal of Cultural Heritage
·
35
Influence of Gd3+ Concentration on PbWO4:Gd3+ Scintillation Characteristics
2000
·
S. Baccaro
, P. Boh�?ek
, et al.
·
physica status solidi (a)
·
19
PDF
The Effect of Co-Doping by Ca[sup 2+], Ta[sup 5+], Sn[sup 4+], and Ru[sup 4+] Ions on the X-Ray Luminescent Properties of Gd[sub 2]O[sub 2]S:Tb[sup 3+] Phosphors
2003
·
R. Morlotti
, C. Magro
, et al.
·
Journal of The Electrochemical Society
·
11
SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization
2001
·
S. Croci
, A. Pêcheur
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
10
Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories
2001
·
S. Croci
, C. Plossu
, et al.
·
Journal of Non-Crystalline Solids
·
10
Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation
1999
·
S. Croci
, J.M. Voisin
, et al.
·
Microelectronics Reliability
·
10
Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress
2001
·
C. Plossu
, S. Croci
, et al.
·
Journal of Non-Crystalline Solids
·
6
Extraction of band diagram parameters from Fowler–Nordheim model in silicon dioxide
2001
·
J.P. Sorbier
, C. Plossu
, et al.
·
Journal of Non-Crystalline Solids
·
4
Capacitance and current–voltage simulation of EEPROM technology highly doped MOS structures
2003
·
S. Croci
, C. Plossu
, et al.
·
Journal of Materials Science Materials in Electronics
·
2
Electronic recombinations and ionic transport in BPSG layers
2001
·
A. Vedda
, E. Carollo
, et al.
·
Microelectronic Engineering
·
2
Glow curves and emission spectra of burnt flints
1999
·
M. Martini
, E. Sibilia
, et al.
·
Quaternary Science Reviews
·
2
The Effect of Co‐Doping by Ca2+, Ta5+, Sn4+, and Ru4+ Ions on the X‐Ray Luminescent Properties of Gd2O2S:Tb3+ Phosphors.
2003
·
R. Morlotti
, C. Magro
, et al.
·
ChemInform
·
1
Effect of nitridation on Fowler–Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate
2001
·
S. Croci
, C. Plossu
, et al.
·
Journal of Materials Science Materials in Electronics
·
1
Trapping and emission centres in PbWO4and CaWO4crystals
1999
·
S. Baccaro
, P. Bohácek
, et al.
·
Radiation effects and defects in solids
·
1
Activity of LUMEN (1996-97) : Understanding of PbWO4 Scintillator Characteristics and their Optimisation
1998
·
S. Baccaro
, G. Spinolo
, et al.
·
CERN Document Server (European Organization for Nuclear Research)
·
1
PDF
Model of leakage current induced by dynamic stress in thin EEPROM tunnel oxides
2003
·
J.P. Sorbier
, S. Croci
, et al.
·
Journal of Non-Crystalline Solids
Effect of TaSi2 and WSi2 deposition on interfacial defects and Fowler-Nordheim injection in polycide gate SiO2 MOS capacitors
2001
·
S. Croci
, C. Plossu
, et al.
·
Journal de Physique IV (Proceedings)
Stress Induced Leakage Current under EEPROM like Dynamic Stress
2001
·
S. Croci
, J.P. Sorbier
, et al.
·
European Solid-State Device Research Conference
Caractérisation et modélisation des propriétés des couches de SiO2 : application aux têtes de lecture-écriture pour disques durs et aux mémoires EEPROM
2001
·
S. Croci
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Works count:
23
Citation count:
244
H-index:
8
I10-index:
8
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