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E. P. Neustroev

Observed names: E P Neustroev, E.P Neustroev, E.P. Neustroev, Efim Neustroev, Efim P. Neustroev, Efim Petrovich Neustroev, Е.П. НЕУСТРОЕВ, Е.П. Неустроев, Ефим Неустроев, Ефим П. Неустроев, Ефим Петрович Неустроев, Неустроев Ефим Петрович
ORCID: 0000-0002-8163-2012
Observed ORCID: 0000-0002-8163-2012
OpenAlex ID: A5067419508
Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen
2001 · A Misiuk, J Bak-Misiuk, et al. · Computational Materials Science · 16
Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix
2009 · Irina V. Antonova, Vladimir A. Volodin, et al. · Journal of Applied Physics · 15
Plasma Treatment of Graphene Oxide
2018 · Efim Petrovich Neustroev · InTech eBooks · 14
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Modification of graphene oxide films by radiofrequency N 2 plasma
2018 · E P Neustroev, E K Burtseva, et al. · Nanotechnology · 13
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Thermal acceptors in irradiated silicon
2000 · V. F. Stas’, I. V. Antonova, et al. · Semiconductors · 11
Study of Electrical Conductivity of Thermally Reduced Graphene Oxide
2015 · Efim P. Neustroev, Mariya V. Nogovitsyna, et al. · Radioelectronics Nanosystems Information Technologies · 9
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Synthesis, Characterisation and Applications of Nanocomposites Based on Silver Nanoparticles and Graphen Oxide
2018 · E. P. Neustroev, I. I. Kurkina, et al. · Journal of Structural Chemistry · 8
Thermal donor formation in crystalline silicon irradiated by high energy ions
2000 · E.P Neustroev, I.V Antonova, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 8
Donor center formation in hydrogen implanted silicon
1999 · E.P Neustroev, I.V Antonova, et al. · Physica B Condensed Matter · 8
Research of Properties of a Carbon Film Formed in Methane Plasma and the Following Annealing
2021 · E P Neustroev, A R Prokopyev, et al. · IOP Conference Series Materials Science and Engineering · 7
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Application of Wavelet Transform to the Raman 2D Peak Components Analysis for Tri- and Tetralayer Graphene
2018 · T. E. Timofeeva, E. P. Neustroev, et al. · Optics and Spectroscopy · 6
Impact of high energy ion implantation on dopant distribution in silicon
1998 · E.P Neustroev, I.V Antonova, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
The Impact of SF6 Plasma on the Properties of Graphene Oxide
2018 · E. P. Neustroev, M. V. Nogovitsyna, et al. · Journal of Structural Chemistry · 5
Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures
2000 · E.P. Neustroev, I.V. Antonova, et al. · Physica B Condensed Matter · 5
Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by Smart-Cut Technology
2000 · V. P. Popov, I. V. Antonova, et al. · Springer eBooks · 5
Properties of Nanographite Formed by Plasma Deposition and Subsequent Heat Treatment
2019 · E.P. Neustroev, A.R. Prokopiev · Physical and Chemical Aspects of the Study of Clusters Nanostructures and Nanomaterials · 4
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Modification of thermally reduced graphene oxide by the SF6/Ar plasma treatment
2017 · E. P. Neustroev, M. V. Nogovitcyna, et al. · Inorganic Materials Applied Research · 4
Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C
2004 · E. P. Neustroev, S. A. Smagulova, et al. · Semiconductors · 4
Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
2001 · I.V. Antonova, E.P. Neustroev, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4
Charge spectroscopy of SiO2 layers with embedded silicon nanocrystals modified by irradiation with high-energy ions
2011 · I. V. Antonova, S. A. Smagulova, et al. · Semiconductors · 3
Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures
2009 · I. V. Antonova, M. S. Kagan, et al. · Science China Technological Sciences · 3
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment
1999 · I. V. Antonova, V. P. Popov, et al. · Semiconductors · 3
Optical properties of thin films formed by carbon deposition in methane plasma and subsequent annealing
2021 · Efim P. Neustroev, Aisen R. Prokopiev, et al. · AIP conference proceedings · 2
Conduction Mechanism of Nanographite Formed by Methane Plasma Deposition and Subsequently Heat Treatment
2019 · Efim P. Neustroev, Aisen R. Prokopiev · Radioelectronics Nanosystems Information Technologies · 2
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Impact of plasma treatment in CH4/N2 on the properties of reduced graphene oxide
2019 · E P Neustroev, A R Prokopiev, et al. · IOP Conference Series Materials Science and Engineering · 2
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Works count: 60
Citation count: 178
H-index: 8
I10-index: 5
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