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Katsunori Ichiki

Observed names: K. Ichiki, Katsunori ICHIKI
Institution: Ebara (Japan)
Observed institution: Ebara (Japan)
OpenAlex ID: A5067507479
Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source
2002 · Seiji Samukawa, Keisuke Sakamoto, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 170
High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias
2001 · Seiji Samukawa, Keisuke Sakamoto, et al. · Japanese Journal of Applied Physics · 77
High-Efficiency Low Energy Neutral Beam Generation Using Negative Ions in Pulsed Plasma
2001 · Seiji Samukawa, Keisuke Sakamoto, et al. · Japanese Journal of Applied Physics · 72
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50 nm gate electrode patterning using a neutral-beam etching system
2004 · Shuichi Noda, Hirotomo Nishimori, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 57
Fast Atom Beam Etching of Glass Materials with Contact and Non-Contact Masks
1997 · Yasushi Toma, Masahiro Hatakeyama, et al. · Japanese Journal of Applied Physics · 36
Characterization of neutral beam source using dc cold cathode discharge and its application processes
2008 · Katsunori Ichiki, Masahiro Hatakeyama · Journal of Physics D Applied Physics · 8
Novel fast atom beam (FAB) processes for fabricating functional nanostructures on three-dimensional microstructures
1997 · M. Hatakeyama, S. Tanaka, et al. · Microsystem Technologies · 5
New fast atom beam processing with separated masks for fabricating multiple microstructures
1996 · K. Ichiki, M. Hatakeyama, et al. · Thin Solid Films · 4
Fast Atom Beam (FAB) Processing with Separated Masks
1995 · Masahiro Hatakeyama, Katsunori Ichiki, et al. · IEICE Transactions on Electronics · 3
Neutral Beam Etching for Damage-free 50 nm Gate Electrode Patterning
2003 · Shuichi Noda, Hirotomo Nishimori, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Large-hole anode-type fast atom beam (LA-FAB) source and its application to high-aspect-ratio GaAs etching
2001 · Kenji Watanabe, Masahiro Hatakeyama, et al. · Applied Surface Science · 1
Integrated Fast Atom Beam (FAB) Processes for Fabricating Micro Diffractive Grating Structures and Micro Textured Surfaces
1999 · Masahiro Hatakeyama, Katsunori Ichiki, et al. · WORLD SCIENTIFIC eBooks · 1
High-performance and damage-free neutral beam etching
2003 · S. Samukawa, K. Sakamoto, et al. · International Symposium on Plasma Process-Induced Damage
High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias : Nuclear Science, Plasmas, Electric Dischanges
2001 · Seiji Samukawa, Keisuke Sakamoto, et al. · Japanese Journal of Applied Physics
New-type focused fast atom beam (F-FAB) source and evaluation of emitted beam density distribution
1996 · M. Hatakeyama, I. Nagahama, et al. · Applied Surface Science
Evaluation for Focused Fast Atom Beam(F-FAB) Density.
1995 · Masahiro HATAKEYAMA, Ichirota NAGAHAMA, et al. · Shinku
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Fast atom beam (FAB) processing method with a radical jet jointly.
1995 · Hatayama Masaki, Katsunori Ichiki, et al. · 真空に関する連合講演会講演予稿集
Works count: 17
Citation count: 435
H-index: 6
I10-index: 5
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