Work

50 nm gate electrode patterning using a neutral-beam etching system

Year: 2004

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.1723338

Authors: Shuichi Noda, Hirotomo Nishimori, Tohru Ida, Tsunetoshi Arikado, Katsunori Ichiki, Takuya Ozaki, Seiji Samukawa

Institutions: Tohoku University, Semiconductor Leading Edge Technologies, Inc (Japan), Institute of Fluid Science, Tohoku University, Ebara (Japan)

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1998721071

FWCI: 6.965

Cites: 11

Cited by: 57

Related to: 10