Author

Shuichi Noda

Observed names: S Noda, S. Noda, Shuichi Noda Shuichi Noda, Syuichi Noda

Institution: National Institute of Advanced Industrial Science and Technology

Observed institutions: National Yang Ming Chiao Tung University, Tohoku University, Showa Denko (Japan), Oki Electric Industry (Japan), Taiwan Semiconductor Manufacturing Company (Taiwan), Association of Super-Advanced Electronics, Institute for Materials Research, Tohoku University, Semiconductor Technology Academic Research Center (Japan), Semiconductor Leading Edge Technologies, Inc (Japan), Institute of Fluid Science, Tohoku University, Niigata University, National Institute of Advanced Industrial Science and Technology

ORCID: 0000-0001-9259-3007

Observed ORCID: 0000-0001-9259-3007

OpenAlex ID: A5010201656

Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

1998 · Tetsuya Tatsumi, Hisataka Hayashi, et al. · Japanese Journal of Applied Physics · 65

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50 nm gate electrode patterning using a neutral-beam etching system

2004 · Shuichi Noda, Hirotomo Nishimori, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 57

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

2017 · Yen-Ku Lin, Shuichi Noda, et al. · IEEE Electron Device Letters · 52

Mechanism of C4F8 dissociation in parallel-plate-type plasma

1999 · Hisataka Hayashi, Satoshi Morishita, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 49

Cu2O/ZnO Heterojunction Solar Cells Fabricated by Magnetron-Sputter Deposition Method Films Using Sintered Ceramics Targets

2013 · S Noda, H Shima, et al. · Journal of Physics Conference Series · 43

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Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

2006 · K. Endo, S. Noda, et al. · IEEE Transactions on Electron Devices · 39

Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

2017 · Wataru Mizubayashi, Shuichi Noda, et al. · Applied Physics Express · 36

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AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

2016 · Yen-Ku Lin, Shuichi Noda, et al. · IEEE Electron Device Letters · 30

Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

2019 · Daisuke Ohori, Takuya Fujii, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 18

Characterization of 100 MHz inductively coupled plasma (ICP) by comparison with 13.56 MHz ICP

1999 · H. Nakagawa, S. Morishita, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 18

A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site

2008 · K. Eriguchi, Y. Nakakubo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16

Damage-free neutral beam etching technology for high mobility FinFETs

2006 · Kazuhiko Endo, S. Noda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16

Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching

2000 · Shuichi Noda, Nobuo Ozawa, et al. · Thin Solid Films · 14

Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System

1998 · Satoshi Morishita, Hisataka Hayashi, et al. · Japanese Journal of Applied Physics · 14

High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

2016 · Y.-J. Lee, T.-C. Hong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13

High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

2021 · Daisuke Ohori, Takuya Fujii, et al. · IEEE Open Journal of Nanotechnology · 11

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Damage-free metal-oxide-semiconductor gate electrode patterning on thin HfSiON film using neutral beam etching

2006 · Shuichi Noda, Takuya Ozaki, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 10

Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

2006 · Kazuhiko Endo, Shuichi Noda, et al. · Japanese Journal of Applied Physics · 10

Highly anisotropic gate electrode patterning in neutral beam etching using F2 gas chemistry

2005 · Shuichi Noda, Yasuyuki Hoshino, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10

CF and CF2Radical Densities in 13.56-MHz CHF3/Ar Inductively Coupled Plasma

2002 · Hideo Nakagawa, Mitsuru Okigawa, et al. · Japanese Journal of Applied Physics · 10

Structural optimization and quantum size effect of Si-nanocrystals in SiC interlayer fabricated with bio-template

2019 · Md Zaman Molla, Denis Zhigunov, et al. · Materials Research Express · 9

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X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect

1996 · Shinji Tsuboi Shinji Tsuboi, Yoshio Yamashita Yoshio Yamashita, et al. · Japanese Journal of Applied Physics · 9

Atomic layer defect-free etching for germanium using HBr neutral beam

2019 · Takuya Fujii, Daisuke Ohori, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 6

Effect of synchrotron radiation on electrical characteristics of SiOxNy thin films formed by rapid thermal processing in a N2O ambient

1993 · Tomiyuki Arakawa, Yoshio Yamashita, et al. · Applied Physics Letters · 6

New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching

2006 · Kazuhiko Endo, Shuichi Noda, et al. · Japanese Journal of Applied Physics · 5

Works count: 90

Citation count: 598

H-index: 14

I10-index: 20