Work

Highly anisotropic gate electrode patterning in neutral beam etching using F2 gas chemistry

Year: 2005

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.2050660

Authors: Shuichi Noda, Yasuyuki Hoshino, Takuya Ozaki, Seiji Samukawa

Institutions: Institute of Fluid Science, Tohoku University, Showa Denko (Japan)

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016755269

FWCI: 1.537

Cites: 28

Cited by: 10

Related to: 10