Effect of synchrotron radiation on electrical characteristics of SiOxNy thin films formed by rapid thermal processing in a N2O ambient
Year: 1993
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.110146
Authors: Tomiyuki Arakawa, Yoshio Yamashita, Hiroshi Hoga, Shuichi Noda, Hisashi Fukuda
Institution: Oki Electric Industry (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1964778355