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Min-Woo Ha

Observed names: HA Min-Woo, M. Ha, M. W. Ha, M.-W. Ha, M.‐W. Ha, Min Woo Ha, Min-Woo Ha Seung-Chul Lee, Minwoo Ha
Institution: Myongji University
ORCID: 0000-0001-6593-227X
Observed ORCID: 0000-0001-6593-227X
OpenAlex ID: A5067615939
Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor
2020 · Kyoungmin Woo, Wonkyu Kang, et al. · Biosensors and Bioelectronics · 35
High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators
2012 · Ogyun Seok, Woojin Ahn, et al. · Semiconductor Science and Technology · 35
High Breakdown Voltage GaN Schottky Barrier Diode employing Floating Metal Rings on AlGaN/GaN Hetero-junction
2005 · Min-Woo Ha Seung-Chul Lee · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 29
Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates
2010 · Ji Ha Kim, Hong Goo Choi, et al. · Japanese Journal of Applied Physics · 26
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PCBM-blended chlorobenzene hybrid anti-solvent engineering for efficient planar perovskite solar cells
2017 · Saemon Yoon, Min-Woo Ha, et al. · Journal of Materials Chemistry C · 24
Accelerated Degradation of IGBTs Due to High Gate Voltage at Various Temperature Environments
2020 · You-Cheol Jang, Soo-Seong Kim, et al. · IEEE Transactions on Device and Materials Reliability · 23
Graphene-ferroelectric hybrid devices for multi-valued memory system
2013 · S. Jandhyala, G. Mordi, et al. · Applied Physics Letters · 22
Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT
2006 · Min-Woo Ha, Seung-Chul Lee, et al. · Superlattices and Microstructures · 19
A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage
2004 · Seung-Chul Lee, Jin-Cherl Her, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 19
Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition
2015 · Jie Huang, Antonio T. Lucero, et al. · Applied Physics Letters · 18
Silicon Dioxide Passivation of AlGaN/GaN HEMTs for High Breakdown Voltage
2006 · Min-Woo Ha, Seung-Chul Lee, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 18
TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing
2020 · Jeong Hyun Moon, In Ho Kang, et al. · Current Applied Physics · 17
Sensible design of open-porous spherical architectures for hybrid supercapacitors with improved high-rate capability
2020 · Byung-Gwan Lee, Seung-Il Shin, et al. · Current Applied Physics · 17
Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide
2020 · Ogyun Seok, In Ho Kang, et al. · Microelectronic Engineering · 15
Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si
2013 · A.Y. Polyakov, N.B. Smirnov, et al. · Journal of Alloys and Compounds · 15
Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
2006 · Seung-Chul Lee, Min-Woo Ha, et al. · Japanese Journal of Applied Physics · 15
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A New Junction Termination Method Employing Shallow Trenches Filled With Oxide
2004 · J.-K. Oh, M.-W. Ha, et al. · IEEE Electron Device Letters · 15
Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD
2018 · Xin Meng, Jaebeom Lee, et al. · IEEE Electron Device Letters · 12
High-Voltage Schottky Barrier Diode on Silicon Substrate
2011 · Min-Woo Ha, Cheong Hyun Roh, et al. · Japanese Journal of Applied Physics · 12
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Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrates
2013 · Min-Woo Ha, Min-Koo Han, et al. · Solid-State Electronics · 11
SiO2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate
2007 · Min-Woo Ha, Young-Hwan Choi, et al. · Japanese Journal of Applied Physics · 11
New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure
2006 · Min-Woo Ha, Seung-Chul Lee, et al. · Superlattices and Microstructures · 11
Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide
2022 · Yeongeun Park, Hyowon Yoon, et al. · Japanese Journal of Applied Physics · 10
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Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation
2021 · Ogyun Seok, Min-Woo Ha · Japanese Journal of Applied Physics · 10
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AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator
2014 · Ogyun Seok, Min-Woo Ha · Solid-State Electronics · 10
Works count: 123
Citation count: 694
H-index: 15
I10-index: 27
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