Work

A New Junction Termination Method Employing Shallow Trenches Filled With Oxide

Year: 2004

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2003.821599

Authors: J.-K. Oh, M.-W. Ha, M.-K. Han, Y.-I. Choi

Institutions: Seoul National University, Ajou University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2170549941

FWCI: 0.623

Cites: 9

Cited by: 15

Related to: 10