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Y.I. Choi

Observed names: Y. I. Choi, Y.-I Choi, Y.-I. Choi, Y.I Choi, Yearn-IK Choi
Institution: Nagoya University
OpenAlex ID: A5111901137
A New Junction Termination Method Employing Shallow Trenches Filled With Oxide
2004 · J.-K. Oh, M.-W. Ha, et al. · IEEE Electron Device Letters · 15
The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime
1999 · D.S Byeon, J.H Chun, et al. · Microelectronics Journal · 15
Dual-gate shorted-anode LIGBT with p/sup +/ injector eliminating the negative resistance regime
2002 · B.-H. Lee, S.-D. Kim, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 11
Buried air gap structure for improving the breakdown voltage of SOI power MOSFET's
2002 · B.C. Jeon, D.Y. Kim, et al. · International Power Electronics and Motion Control Conference (IPEMC) · 10
Numerical analysis on the LDMOS with a double epi-layer and trench electrodes
2001 · I.-Y Park, Y.-I Choi, et al. · Microelectronics Journal · 10
An analytical method for two-dimensional field distribution of a MOS structure with a finite field plate
1995 · S.K. Chung, D.C. Yoo, et al. · IEEE Transactions on Electron Devices · 10
Improved trench MOS barrier Schottky (TMBS) rectifier
2003 · Jin-Woo Moon, Yearn-IK Choi, et al. · IEEE International Conference on Microelectronics (MIEL) · 9
Micro-Electrochemical Investigation on a Single Coating Defect of Galvanized Steel with the Capillary-Based Droplet Cell
2012 · Y.-I. Choi, D. Paik, et al. · ECS Electrochemistry Letters · 7
Breakdown voltage and on-resistance of multi-RESURF LDMOS
2003 · E.K. Choi, Y.I. Choi, et al. · Microelectronics Journal · 6
A base resistance controlled thyristor with the self-align corrugated p-base
2002 · D.-S. Byeon, B.-H. Lee, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
Novel Schottky diode with selfaligned guard ring
1992 · S.I. Cha, Y.H. Cho, et al. · Electronics Letters · 5
Numerical analysis of SOI LDMOS using a recessed source and a trench drain
2000 · S.-J Yoo, S.-H Kim, et al. · Microelectronics Journal · 4
Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs
1993 · S.K. Lee, C.H. Oh, et al. · Journal of Non-Crystalline Solids · 4
Buried gate SOI LIGBT without latch-up susceptibility
2002 · I.-Y. Park, S.-H. Kim, et al. · IEEE International SOI Conference (SOI) · 3
An insulated gate bipolar transistor employing the plugged n+ anode
1999 · J.H Chun, B.H Lee, et al. · Microelectronics Reliability · 3
The Closed-Form Solutions For The Breakdown Voltages Of 6H-SiC Reachthrough Diodes
1998 · You-Sang Lee, D.-S. Byeon, et al. · MRS Proceedings · 3
A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics
1999 · J.K Oh, D.Y Kim, et al. · Microelectronics Journal · 2
Increased breakdown voltage of silicon-on-insulator Schottky diodes
1993 · B.R. Kang, S.N. Yoon, et al. · Electronics Letters · 1
An analytic model for breakdown voltage of gated diodes
2003 · S.K. Han, Y.I. Choi, et al. · Microelectronics Journal
Lateral dual channel emitter switched thyristor employing segmented p-base
2003 · D.-S. Byeon, J.-K. Oh, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
A new lateral conductivity modulated thyristor (LCMT)
2002 · Y.S. Lee, M.K. Han, et al. · International Semiconductor Device Research Symposium
A Lateral Trench-MOS Bipolar-Mode FET on Silicon-On-Insulator
1999 · Doo-Young Kim, Dae-Seok Byeon, et al. · Physica Scripta
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The Estimation and revision of barrier heights in 4H- SiC and 6H-sic Schottky Diodes
1998 · You-Sang Lee, D.-Y. Kim, et al. · MRS Proceedings
Analysis of Dynamic Latch-up Phenomenon in SOI LIGBT
1995 · B H Lee, M. K. Han, et al. · International Conference on Performance Engineering
Lateral Si avalanche photodiode fabricated over an etched interdigital mesa
1990 · M.-H. Chung, Y.-I. Choi, et al. · Electronics Letters
Works count: 26
Citation count: 123
H-index: 7
I10-index: 6
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