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Steven Wienecke

Observed names: S Wienecke, S. Wienecke, Wienecke, Steven
Observed institutions: University of Padua, University of California, Santa Barbara, University of California System, Transphorm (United States), Renesas Electronics (Japan), Renesas Electronics (United States)
ORCID: 0000-0002-7926-3924
Observed ORCID: 0000-0002-7926-3924
OpenAlex ID: A5067682768
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
2017 · Brian Romanczyk, Steven Wienecke, et al. · IEEE Transactions on Electron Devices · 234
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
2017 · Steven Wienecke, Brian Romanczyk, et al. · IEEE Electron Device Letters · 120
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
2018 · Onur S. Koksaldi, Jeffrey Haller, et al. · IEEE Electron Device Letters · 103
N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage
2015 · Xun Zheng, Matthew Guidry, et al. · IEEE Electron Device Letters · 58
1200V GaN Switches on Sapphire Substrate
2022 · G. Gupta, M. Kanamura, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 53
N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz
2016 · Steven Wienecke, Brian Romanczyk, et al. · IEEE Electron Device Letters · 47
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
2018 · Davide Bisi, Carlo De Santi, et al. · IEEE Electron Device Letters · 37
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
2016 · Matthew Guidry, Steven Wienecke, et al. · IEEE MTT-S International Microwave Symposium digest · 32
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
2013 · X. Liu, R. Yeluri, et al. · Applied Physics Letters · 30
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion
2016 · Xun Zheng, Haoran Li, et al. · IEEE Lester Eastman Conference on High Performance Devices · 29
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz
2016 · B. Romanczyk, M. Guidry, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Record 34.2% efficient mm‐wave N‐polar AlGaN/GaN MISHEMT at 87 GHz
2016 · B. Romanczyk, M. Guidry, et al. · Electronics Letters · 28
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
2020 · Davide Bisi, Steven Wienecke, et al. · IEEE Electron Device Letters · 25
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$
2018 · Xun Zheng, Haoran Li, et al. · IEEE Electron Device Letters · 24
W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width
2016 · Matthew Guidry, Steven Wienecke, et al. · ARFTG Microwave Measurement Conference · 24
Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime
2014 · Elaheh Ahmadi, Ravi Shivaraman, et al. · Applied Physics Letters · 24
Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs
2019 · M. Guidry, B. Romanczyk, et al. · European Microwave Integrated Circuits Conference · 19
Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels
2018 · Haoran Li, Steven Wienecke, et al. · Applied Physics Letters · 15
mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire
2016 · Brian Romanczyk, Steven Wienecke, et al. · Conference digest · 15
InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays
2015 · Stacia Keller, Cory Lund, et al. · Semiconductor Science and Technology · 15
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In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
2014 · X. Liu, J. Kim, et al. · Applied Physics Letters · 15
High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz
2017 · A. Arias, P. Rowell, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 14
N-polar GaN MIS-HEMTs on sapphire with a proposed figure of merit fmax·VDS, Q of 9.5THz.V
2017 · Xun Zheng, Matthew Guidry, et al. · Conference digest · 7
Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition
2017 · Haoran Li, Baishakhi Mazumder, et al. · Semiconductor Science and Technology · 6
N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz
2016 · Steven Wienecke, Brian Romanczyk, et al. · Conference digest · 6
Works count: 36
Citation count: 1,016
H-index: 17
I10-index: 22
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