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Y. Ushiku

Observed names: Yukihiro USHIKU, Yukihiro Ushiku, Yukihiro Ushiku Yukihiro Ushiku
OpenAlex ID: A5068109870
Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films
1994 · T. Ohguro, S. Nakamura, et al. · IEEE Transactions on Electron Devices · 151
Technology trends of silicon-on-insulator-its advantages and problems to be solved
2002 · M. Yoshimi, M. Terauchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 47
Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure
1997 · M. Yoshimi, M. Terauchi, et al. · IEEE Transactions on Electron Devices · 46
P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall
1993 · M. Saito, T. Yoshitomi, et al. · IEEE Transactions on Electron Devices · 24
Low-resistance ultrashallow extension formed by optimized flash lamp annealing
2003 · T. Ito, K. Suguro, et al. · IEEE Transactions on Semiconductor Manufacturing · 21
Flash lamp annealing technology for ultra-shallow junction formation
2002 · T. Ito, K. Suguro, et al. · International Workshop on Junction Technology · 18
Performance fluctuations of 0.10 μm MOSFETs-limitation of 0.1 μm ULSIs
2002 · T. Mizuno, M. Iwase, et al. · Symposium on VLSI Technology · 13
A 2.1-ns Dead Time 5-μm Single Photon Avalanche Diode with 2-Layer Transistor Pixel Technology
2024 · J. Ogi, S. Kitamura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Development of a planarized Al-Si contact filling technology
2002 · H. Ono, Y. Ushiku, et al. · International IEEE VLSI Multilevel Interconnection Conference · 8
A new contact plug technique for deep-submicrometer ULSI is employing selective nickel silcidation of polysilicon with a titanium nitride stopper
1993 · T. Iijima, A. Nishiyama, et al. · IEEE Transactions on Electron Devices · 7
Hot carrier induced degradation mode depending on the LDD structure in NMOSFET's
1987 · A. Yoshida, Y. Ushiku · Technical digest - International Electron Devices Meeting/Technical digest · 7
The Origin of Extended Dislocations Induced by High-Dose Ion Implantation
2005 · N. Tsuchiya, O. Fujii, et al. · IEEE Transactions on Semiconductor Manufacturing · 6
Evaluation of 0.3 µm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
1998 · Tomoko Matsudai, Mamoru Terauchi, et al. · Japanese Journal of Applied Physics · 6
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Agglomeration Resistant Self-Aligned Silicide Process Using N 2 Implantation into TiSi 2
1997 · Akira Nishiyama Akira Nishiyama, Yasushi Akasaka Yasushi Akasaka, et al. · Japanese Journal of Applied Physics · 6
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Analysis of Anomalously Large Junction Leakage Current of Nickel Silicided N-Type Diffused Layer and Its Improvement
1993 · T. Ohguro, T. Morimoto, et al. · International Conference on Solid State Devices and Materials (SSDM) · 6
A three-level wiring capacitance analysis for VLSIs using a three-dimensional simulator
2003 · Y. Ushiku, H. Ono, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
A novel selective Ni/sub 3/Si contact plug technique for deep-submicron ULSIs
2003 · T. Iijima, A. Nishiyama, et al. · Symposium on VLSI Technology · 5
The Interrelation Between the Morphology of Oxide Precipitates and the Junction Leakage Current in Czochralski Silicon Crystals
1999 · Hiroyuki Fujimori, Yukihiro Ushiku, et al. · Journal of The Electrochemical Society · 5
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Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
1997 · Atsushi Yagishita, Tomohiro Saito, et al. · Japanese Journal of Applied Physics · 5
Suppression of the floating-body effects in SOI MOSFETs by bandgap engineering
2002 · M. Terauchi, M. Yoshimi, et al. · Symposium on VLSI Technology · 4
Design guidelines for deep-sub-micrometer interconnections
2002 · Y. Ushiku, H. Kushibe, et al. · International IEEE VLSI Multilevel Interconnection Conference · 3
Highly sensitive inspection system for lithography-related faults in agile-fab - detecting algorithm for monitoring and evaluation of yield impact
2002 · H. Matsushita, K. Mitsutake, et al. · IEEE Transactions on Semiconductor Manufacturing · 3
Comparison of Ti and Ni salicides as regards the electrical conductance of silicided films
1993 · T. Ohguro, T. Morimoto, et al. · European Solid-State Device Research Conference · 3
A thermally stable salicide process using N/sub 2/ implantation into TiSi/sub 2/
2002 · A. Nishiyama, Y. Akasaka, et al. · International IEEE VLSI Multilevel Interconnection Conference · 2
New method of extraction of systematic failure component
2002 · K. Mitsutake, Y. Ushiku, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings · 2
Works count: 36
Citation count: 418
H-index: 8
I10-index: 7
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