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Author

Feng Zhou

Observed names: F. H. Zhou, F. Zhou, Feng 峰 Zhou 周, Zhou, Feng
Observed institutions: Beijing University of Posts and Telecommunications, Chongqing University, Jinan University, Chinese Academy of Sciences, Hainan University, Nanjing General Hospital of Nanjing Military Command, Lanzhou Institute of Chemical Physics, Second Affiliated Hospital of Chongqing Medical University, Collaborative Innovation Center of Advanced Microstructures, Aero Engine Corporation of China (China), National Laboratory of Solid State Microstructures, State Key Laboratory of Solid Lubrication, State Grid Chongqing Electric Power Company (China), Guangzhou College of Technology and Business, JDSU (United States), Southeast University, Nanjing Medical University, Nanjing University
ORCID: 0000-0002-3159-0328
Observed ORCID: 0000-0002-3159-0328
OpenAlex ID: A5068237894
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
2023 · Feng Zhou, Hehe Gong, et al. · Nature Communications · 209
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1.37 kV/12 A NiO/β-Ga2O3Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability
2021 · Hehe Gong, Feng Zhou, et al. · IEEE Transactions on Power Electronics · 132
1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness
2021 · Feng Zhou, Hehe Gong, et al. · IEEE Transactions on Power Electronics · 102
70-μm-Body Ga 2 O 3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency
2022 · Hehe Gong, Feng Zhou, et al. · IEEE Electron Device Letters · 57
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics
2021 · Feng Zhou, Weizong Xu, et al. · IEEE Electron Device Letters · 55
Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
2021 · F. Zhou, H. H. Gong, et al. · Applied Physics Letters · 53
Immune enhancement in patients with predicted severe acute necrotising pancreatitis: a multicentre double-blind randomised controlled trial
2022 · Lu Ke, Jing Zhou, et al. · Intensive Care Medicine · 48
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Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region
2016 · Jing Zhu, Long Zhang, et al. · IEEE Transactions on Electron Devices · 45
Irradiation Hardened p -GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm 2 /mg and 95% Conversion Efficiency at 300 W/500 kHz
2024 · Feng Zhou, Can Zou, et al. · IEEE Electron Device Letters · 40
Narrow linewidth sampled-grating distributed Bragg reflector laser with enhanced side-mode suppression
2015 · M. C. Larson, A. Bhardwaj, et al. · Optical Fiber Communication Conference · 40
1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability
2021 · Feng Zhou, Weizong Xu, et al. · IEEE Transactions on Power Electronics · 38
Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability
2021 · Feng Zhou, Weizong Xu, et al. · IEEE Transactions on Power Electronics · 37
Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization
2024 · Hehe Gong, Feng Zhou, et al. · IEEE Electron Device Letters · 34
An All-Fiber Reflective Hydrogen Sensor Based on a Photonic Crystal Fiber In-Line Interferometer
2014 · Feng Zhou, Sun-Jie Qiu, et al. · IEEE Sensors Journal · 31
High- V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering
2023 · Yulei Jin, Feng Zhou, et al. · IEEE Transactions on Electron Devices · 20
A novel high-voltage interconnection structure with dual trenches for 500V SOI-LIGBT
2016 · Long Zhang, Jing Zhu, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 20
The Performance Impact of Buffer Sizes for Multi-path TCP in Internet Setups
2017 · Feng Zhou, Thomas Dreibholz, et al. · International Conference on Advanced Information Networking and Applications (AINA) · 18
Performance comparison of congestion control strategies for multi-path TCP in the NORNET testbed
2015 · Fa Fu, Xing Zhou, et al. · IEEE/CIC International Conference on Communications in China (ICCC) · 18
Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin p-GaN Design
2025 · Wenfeng Wang, Feng Zhou, et al. · IEEE Transactions on Electron Devices · 16
Current transport dynamics and stability characteristics of the NiO x based gate structure for normally-off GaN HEMTs
2022 · Yonghao Du, Weizong Xu, et al. · Journal of Physics D Applied Physics · 16
Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity
2020 · Yu Lu, Feng Zhou, et al. · Applied Physics Express · 16
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Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination
2024 · N. Sun, H. H. Gong, et al. · Applied Physics Letters · 15
0.58 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 15.6 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation
2024 · Wei Qi, Feng Zhou, et al. · IEEE Electron Device Letters · 15
Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques
2022 · Qi Wei, Feng Zhou, et al. · IEEE Journal of the Electron Devices Society · 14
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1.4-kV Irradiation-Hardened β -Ga₂O₃ Heterojunction Barrier Schottky Diode Under 10⁷ ions/cm² Fluence and 82.1 MeV⋅cm²/mg LET Environments
2025 · Na Sun, Zhengliang Zhang, et al. · IEEE Electron Device Letters · 13
Works count: 104
Citation count: 1,397
H-index: 18
I10-index: 34
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