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Author

S. W. Sun

Observed names: S. Sun, S.W. Sun, Shangheng Sun
Institution: Qingdao University
ORCID: 0009-0004-8509-900X
Observed ORCID: 0009-0004-8509-900X
OpenAlex ID: A5069091254
The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach
2008 · C. M. Chang, Steve S. Chung, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 63
A new observation of the germanium outdiffusion effect on the hot carrier and nbti reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices
2005 · S.S. Chung, Y.R. Liu, et al. · Symposium on VLSI Technology · 12
In2O3/ZnO heterojunction thin film transistor for high recognition accuracy neuromorphic computing and optoelectronic artificial synapses
2024 · Shangheng Sun, Minghao Zhang, et al. · Nanotechnology · 9
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A fully planarized 6-level-metal CMOS technology for 0.25-0.18 micron foundry manufacturing
2002 · T. Lin, C. Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
A new insight into the degradation mechanisms of various mobility-enhanced cmos devices with different substrate engineering
2006 · S.S. Chung, Y.R. Liu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
A 6-level-metal CMOS process for 0.25-0.18 micron foundry manufacturing
2002 · S.W. Sun · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1
High Performance Sub-0.1 μm Dynamic Threshold MOSFET Using Indium Channel Implantation
1999 · S. J. Chang, C. Chen, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions
2008 · H. W. Chen, S. Y. Chen, et al. · ECS Transactions
Interfacial and Electrical Characterization of ALD HfSiON Gated MOSFETs with Different Compositions after Channel Hot-Carrier Stress
2008 · H. W. Chen, S. Y. Chen, et al. · International Conference on Solid State Devices and Materials (SSDM)
New Observations on the Narrow Width Effect of the Hot Carrier and NBTI Reliabilities in pMOSFETs with Various Types of Strains
2007 · S. S. Chung, D. C. Huang, et al. · International Conference on Solid State Devices and Materials (SSDM)
Twin-GD: A New Twin Gated-Diode Measurement for the Interface Characterization of Ultra-Thin Gate Oxide MOSFET's with EOT Down to 1nm
2006 · G. Lee, S. Chung, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs
2004 · C.T. Chan, C.H. Kuo, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Advanced 0.25-0.18 μm fully-planarized 6-level-interconnect CMOS technology for foundry manufacturing
2002 · T. Lin, C. Chen, et al. · Semiconductor Manufacturing Technology Workshop (SMTW)
A Low Thermal-Budget High-Performanced 0.25-0.18um Merged Logic and DRAM
1999 · W. K. Yeh, Y. C. Lin, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 14
Citation count: 95
H-index: 4
I10-index: 2
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