Work

Interfacial and Electrical Characterization of ALD HfSiON Gated MOSFETs with Different Compositions after Channel Hot-Carrier Stress

Year: 2008

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2008.p-1-6

Authors: H. W. Chen, S. Y. Chen, C. C. Lu, C. H. Liu, F. C. Chiu, H. S. Huang, L. W. Cheng, C. T. Lin, G. H. Ma, S. W. Sun

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2470148870

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