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H. S. Huang
Observed name:
Hsin-Sing Huang
Institution:
Feng Chia University
Observed institutions:
National Taipei University of Technology,
Feng Chia University
OpenAlex ID:
A5111908892
Dynamic Surface Profilometry and Resonant-Mode Detection for Microstructure Characterization Using Nonconventional Stroboscopic Interferometry
2009
·
Liang-Chia Chen
, Xuan-Loc Nguyen
, et al.
·
IEEE Transactions on Industrial Electronics
·
10
Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method
2008
·
S. Y. Chen
, H. W. Chen
, et al.
·
ECS Transactions
·
4
AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition
2015
·
H. Y. Liu
, C. S. Lee
, et al.
·
IEEE International Conference on Power Electronics and Drive Systems (PEDS)
·
2
AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique
2015
·
C. S. Lee
, H. Y. Liu
, et al.
·
IEEE International Conference on Power Electronics and Drive Systems (PEDS)
·
1
The Influence of La and Zr Doping on TDDB Characteristics of HfO2 Thin Films
2010
·
H. W. Chen
, C. H. Liu
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Carrier Transportation of ALD HfLaO Gate Dielectrics with 0.72 nm EOT
2009
·
H. W. Chen
, Y. W. Liao
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique
2008
·
F. C. Chiu
, H. W. Chen
, et al.
·
ECS Transactions
PDF
Interfacial and Electrical Characterization in MOSFETs with CeO2 Gate Dielectric
2008
·
F. C. Chiu
, H. W. Chen
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Interfacial and Electrical Characterization of ALD HfSiON Gated MOSFETs with Different Compositions after Channel Hot-Carrier Stress
2008
·
H. W. Chen
, S. Y. Chen
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method
2008
·
S. Y. Chen
, H. W. Chen
, et al.
·
ECS Meeting Abstracts
PDF
Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique
2008
·
F. C. Chiu
, H. W. Chen
, et al.
·
ECS Meeting Abstracts
PDF
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Works count:
11
Citation count:
17
H-index:
2
I10-index:
1
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