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Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique

Year: 2008

Type: conference-abstract

Source: ECS Meeting Abstracts

DOI: 10.1149/ma2008-02/25/1964

Authors: F. C. Chiu, H. W. Chen, C. H. Liu, S. Y. Chen, H. S. Huang

Institutions: Ming Chuan University, National Taipei University of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: National Science Council

OpenAlex ID: W4243129707

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