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Alessio Pantellini

Observed names: A Pantellini, A. Pantellini, Pantellini, A
OpenAlex ID: A5069166062
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
2014 · Matteo Meneghini, Isabella Rossetto, et al. · IEEE Transactions on Electron Devices · 203
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design
2015 · Davide Bisi, Alessandro Chini, et al. · IEEE Electron Device Letters · 56
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Development of GaN based MMIC for next generation X-Band space SAR T/R module
2012 · Barigelli, A, COLANGELI, SERGIO, et al. · Cineca Institutional Research Information System (Tor Vergata University) · 24
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs
2014 · Matteo Meneghini, Isabella Rossetto, et al. · IEEE International Reliability Physics Symposium proceedings · 23
Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology
2011 · M. Riccio, A. Pantellini, et al. · Microelectronics Reliability · 23
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
2015 · D. Bisi, A. Stocco, et al. · Microelectronics Reliability · 18
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors
2013 · D. Bisi, M. Meneghini, et al. · European Solid-State Device Research Conference · 15
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications
2023 · Nicolò Zagni, Veronica Zhan Gao, et al. · IEEE Transactions on Device and Materials Reliability · 11
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Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs
2013 · A. Chini, F. Soci, et al. · Microelectronics Reliability · 11
New fabrication process to manufacture RF-MEMS and HEMT on GaN/Si substrate
2009 · F. Crispoldi, A. Pantellini, et al. · European Microwave Conference (EuMC) · 8
Evaluation of FET performance and restrictions by low-frequency measurements
2014 · Valeria Vadala, Antonio Raffo, et al. · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · 7
Field plate related reliability improvements in GaN-on-Si HEMTs
2012 · A. Chini, F. Soci, et al. · Microelectronics Reliability · 7
GaN-on-Silicon Evaluation for High-Power MMIC Applications
2012 · Alessio Pantellini, Claudio Lanzieri, et al. · Materials science forum · 7
Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications
2011 · D. Dominijanni, E. Giovine, et al. · Microelectronic Engineering · 7
High Voltage Breakdown pHEMTs for C-band HPA
2010 · S. Lavanga, Alessandro Chini, et al. · IRIS UNIMORE (University of Modena and Reggio Emilia) · 7
1–7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate
2012 · Rocco Giofrè, Paolo Colantonio, et al. · Cineca Institutional Research Information System (Tor Vergata University) · 6
Thermal behavior of AlGaN/GaN HEMT on silicon Microstrip technology
2011 · A. Pantellini, A. Nanni, et al. · European Microwave Integrated Circuit Conference · 6
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers
2022 · Carlo De Santi, Enrico Zanoni, et al. · Gallium Nitride Materials and Devices · 5
Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate
2010 · Flavia Crispoldi, Alessio Pantellini, et al. · International Journal of Microwave and Wireless Technologies · 5
Improved phase linearity in Source Field Plate AlGaN/GaN HEMTs
2014 · P. Colantonio, F. Giannini, et al. · European Microwave Integrated Circuits Conference · 4
Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices
2014 · A Redondo-Cubero, L Vázquez, et al. · Journal of Physics D Applied Physics · 4
A GaN on SiC process with high power density and efficiency
2013 · Rocco Giofrè, Paolo Colantonio, et al. · Cineca Institutional Research Information System (Tor Vergata University) · 3
Wide bandgap technology: The right solution for Space and Defense market
2012 · C. Lanzieri, A. Pantellini, et al. · International Conference on Microwaves, Radar & Wireless Communications · 3
Ultra wide band power amplifier using GaN on Si HEMT device
2012 · R. Giofre, P. Colantonio, et al. · International Conference on Microwaves, Radar & Wireless Communications · 3
Reliability Investigation of GaN HEMTs for MMICs Applications
2014 · Alessandro Chini, Gaudenzio Meneghesso, et al. · Micromachines · 2
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Works count: 44
Citation count: 476
H-index: 9
I10-index: 9
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