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Xavier Gagnard

Observed names: Gagnard, X., X. Gagnard
OpenAlex ID: A5069763801
Through silicon via: From the CMOS imager sensor wafer level package to the 3D integration
2009 · Xavier Gagnard, Thierry Mourier · Microelectronic Engineering · 154
Low-Resistance Integrated Toroidal Inductor for Power Management
2006 · B. Orlando, R. Hida, et al. · IEEE Transactions on Magnetics · 59
Low Resistance Integrated Toroidal Inductors for Power Management
2006 · B. Orlando, R. Hida, et al. · IEEE International Magnetics Conference · 41
Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors
2008 · Perceval Coudrain, Perrine Batude, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 35
3D integration technology for set-top box application
2009 · D. Henry, S. Cheramy, et al. · IEEE International Conference on 3D System Integration (3DIC) · 21
SrTiO3/BaTiO3 multilayers thin films for integrated tunable capacitors applications
2007 · Benoit Guigues, Julie Guillan, et al. · Journal of the European Ceramic Society · 21
Investigation of a Sequential Three-Dimensional Process for Back-Illuminated CMOS Image Sensors With Miniaturized Pixels
2009 · Perceval Coudrain, Pierre Magnan, et al. · IEEE Transactions on Electron Devices · 18
New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology
1999 · X. Gagnard, M. Taurin, et al. · Microelectronics Reliability · 7
A spectroscopic ellipsometry investigation of RF‐sputtered crystalline vanadium pentoxide thin films
2008 · S. Oukassi, X. Gagnard, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2
40GHz Low Noise Receiver Circuits using BCB Above-Silicon Technology Optimized for Millimeter-wave Applications
2007 · S. Pruvost, R. Cuchet, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 2
Building-in reliability, application to bipolar/CMOS/DMOS technology
2003 · X. Gagnard, O. Bonnaud · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 2
Reliability improvement of high value doped polysilicon-based resistors
2002 · E. Carvou, F. Le Bihan, et al. · Microelectronics Reliability · 2
Through Silicon Via Implementation in CMOS Image Sensor Product
2011 · Xavier Gagnard, Nicolas hotellier · Pan Stanford Publishing eBooks · 1
Unique measurement to monitor the gate oxide lifetime indicator, case studies
2002 · X. Gagnard, O. Bonnaud · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 1
Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology
2001 · X. Gagnard, Y. Rey-Tauriac, et al. · Microelectronics Reliability · 1
Développement, mise en place et optimisation de méthodes de contrôle de fiabilité des technologies bipolaire/CMOS/DMOS au niveau des plaquettes en cours de procédé (WLR)
2001 · X. Gagnard · 1
Off-line wafer level reliability control: unique measurement method to monitor the lifetime indicator of gate oxide validated within bipolar/CMOS/DMOS technology
2000 · Xavier Gagnard, Olivier Bonnaud · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Les Indicateurs de Fiabilité en microélectronique
2004 · Gagnard, X., Bonnaud, Olivier · HAL
Electrical Properties of High Value Doped Polysilicon-Based Resistors
2003 · E. Carvou, F. Le Bihan, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Indicateur de Fiabilité
2003 · Gagnard, X., Bonnaud, Olivier · HAL
Relation between degradation of electrical parameters of MOS transistors by hot carrier injection and their drift due to radiation for a new rad-hardened ACMOS technology
2002 · I. Frapreau, X. Gagnard
Very fast reliability test at wafer level applied to a BCD technology
2002 · Bonnaud, Olivier, Gagnard, X. · HAL
Works count: 24
Citation count: 369
H-index: 7
I10-index: 7
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