Author

Wolfgang Brockerhoff

Observed names: Brockerhoff, W., W Brockerhoff, W. Brockerhoff

Institution: University of Duisburg-Essen

Observed institutions: Middlesex University London, University of Duisburg-Essen

OpenAlex ID: A5069855419

Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

1997 · R. Reuter, M. Agethen, et al. · IEEE Transactions on Microwave Theory and Techniques · 63

Improved short-channel GaAs MESFET's by use of higher doping concentration

1984 · H. Daembkes, W. Brockerhoff, et al. · IEEE Transactions on Electron Devices · 38

On-wafer microwave measurement setup for investigations on HEMTs and high-T/sub c/ superconductors at cryogenic temperatures down to 20 K

1992 · H. Meschede, R. Reuter, et al. · IEEE Transactions on Microwave Theory and Techniques · 34

High-Frequency Measurements on InAs Nanowire Field-Effect Transistors Using Coplanar Waveguide Contacts

2009 · Kai Blekker, Benjamin Munstermann, et al. · IEEE Transactions on Nanotechnology · 27

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

1994 · C. Heedt, F. Buchali, et al. · IEEE Transactions on Electron Devices · 26

Sub-Nanosecond Pulse Generation using Resonant Tunneling Diodes for Impulse Radio

2007 · A. Matiss, A. Poloczek, et al. · IEEE International Conference on Ultra-Wideband (ICUWB) · 23

Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature

1984 · H. Dämbkes, W. Brockerhoff, et al. · Electronics Letters · 17

Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET

2002 · R. Reuter, M. Agethen, et al. · IEEE MTT-S International Microwave Symposium digest · 16

RF measurements and characterization of heterostructure field-effect transistors at low temperatures

1989 · W. Brockerhoff, H. Meschede, et al. · IEEE Transactions on Microwave Theory and Techniques · 16

InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices

1996 · W. Daumann, P. Ellrodt, et al. · IEEE Electron Device Letters · 13

A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources

1995 · R Reuter, St van Waasen, et al. · European Microwave Conference (EuMC) · 9

Gate-voltage-dependent transport measurements on heterostructure field-effect transistors

1986 · W. Prost, W. Brockerhoff, et al. · IEEE Transactions on Electron Devices · 9

Large-signal analysis and AC modelling of sub micron resonant tunnelling diodes

2007 · A. Matiss, A. Poloczek, et al. · European Microwave Integrated Circuits Conference · 8

InP-based HFETs and RTDs for high speed digital circuitry

2002 · W. Prost, U. Auer, et al. · International Symposium on Signals, Systems and Electronics · 6

Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model

1995 · P Ellrodt, W Brockerhoff, et al. · Solid-State Electronics · 6

RF Investigations on HEMT's at Cryogenic Temperatures Down to 20 K using an On-Wafer Microwave Measurement Setup

1992 · H. Meschede, J. Albers, et al. · European Microwave Conference (EuMC) · 6

Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitance

1995 · D Peters, W Daumann, et al. · European Microwave Conference (EuMC) · 5

InAlAs/InGaAs/InP dual-gate-HFET's: new aspects and properties

2002 · F.-J. Tegude, W. Daumann, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 4

Simulation of surface effects in planar GaAs MESFET structures by use of a quasi‐2D model

1990 · Wolfgang Brockerhoff, Michael Versteegen, et al. · European Transactions on Telecommunications · 4

Low-Temperature DC and RF Measurement and Modelling of InGaAs-InAlAs Resonant Tunneling Diodes down to 15 K

2006 · A. Matiss, W. Brockerhoff, et al. · European Microwave Integrated Circuits Conference · 2

InP-based logic gates for low power monolithic optoelectronic circuits [InGaAs/InAlAs/InP]

2002 · A. Brennemann, E. Bushehri, et al. · IEEE International Conference on Electronics, Circuits and Systems (ICECS) · 2

d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperatures

1990 · W. Brockerhoff, W. Prost, et al. · Solid-State Electronics · 2

GaAs—MESFETs with highly doped (1018cm-3) channels—An experimental and numerical investigation

1983 · H. Dambkes, W. Brockerhoff, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2

Design of low-power RTD-based-VCOs for Ka-band application

2010 · Benjamin Munstermann, K. Blekker, et al. · German Microwave Conference · 1

Large-Signal Performance of Resonant Tunnelling Diodes in K-Band Oscillators

2008 · B. Munstermann, A. Matiss, et al. · European Microwave Integrated Circuits Conference · 1

Works count: 58

Citation count: 350

H-index: 10

I10-index: 10