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Feng-Tso Chien

Observed names: Chien, Chien Feng Tso, Chien Feng-Tso, F. T. Chien, F.-T. Chien, F.T. Chien, Feng Tso Chien, Feng‐Tso Chien
ORCID: 0000-0002-4097-6046
Observed ORCID: 0000-0002-4097-6046
OpenAlex ID: A5071502914
Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design
1999 · Feng-Tso Chien, Yi-Jen Chan · IEEE Journal of Solid-State Circuits · 88
High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique
2018 · Hsien-Chin Chiu, Yi-Sheng Chang, et al. · IEEE Transactions on Electron Devices · 62
Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions
2013 · Hsien-Chin Chiu, Chih-Wei Yang, et al. · IEEE Transactions on Electron Devices · 57
Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes
2003 · Yow-Jon Lin, Quantum Ker, et al. · Journal of Applied Physics · 53
Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching
2002 · Hsien-Chin Chiu, Shih-Cheng Yang, et al. · IEEE Electron Device Letters · 39
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
2021 · Hsien-Chin Chiu, Chia-Hao Liu, et al. · Membranes · 30
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Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology
2011 · Hsien-Chin Chiu, Chih-Wei Yang, et al. · Applied Physics Letters · 27
High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design
2012 · Chao-Hung Chen, Hsien-Chin Chiu, et al. · Microelectronics Reliability · 21
Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment
2005 · Yow-Jon Lin, Wen-Xiang Lin, et al. · Solid State Communications · 19
A novel LTPS-TFT-based charge-trapping memory device with field-enhanced nanowire structure
2009 · Ta-Chuan Liao, Sheng-Kai Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
2020 · Feng-Tso Chien, Zhi-Zhe Wang, et al. · Micromachines · 15
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Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFETs
2000 · Feng-Tso Chien, Shien-Chin Chiol, et al. · IEEE Electron Device Letters · 15
2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
2018 · Xinke Liu, Hsien-Chin Chiu, et al. · IEEE Journal of the Electron Devices Society · 14
A Kink-Effect-Free Poly-Si Thin-Film Transistor With Current and Electric Field Split Structure Design
2010 · Feng-Tso Chien, Yi-Ju Chen · IEEE Transactions on Electron Devices · 14
Induced changes in surface band bending of n-type and p-type AlGaN by oxidation and wet chemical treatments
2006 · Yow-Jon Lin, Yow-Lin Chu, et al. · Journal of Applied Physics · 13
Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN
2003 · Yow-Jon Lin, Zhen-Dao Li, et al. · Applied Physics Letters · 13
Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design
2014 · Tsung-Kuei Kang, Ysung-Yu Yang, et al. · IEEE Transactions on Electron Devices · 11
Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process
2019 · Hsien-Chin Chiu, Chia-Hao Liu, et al. · IEEE Journal of the Electron Devices Society · 10
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Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis
2013 · Hsien-Chin Chiu, Chao-Hung Chen, et al. · Microelectronics Reliability · 10
A Novel Self-Aligned Double-Channel Polysilicon Thin-Film Transistor
2012 · Feng-Tso Chien, Chii-Wen Chen, et al. · IEEE Transactions on Electron Devices · 10
Device characteristics of AlGaN/GaN MIS–HEMTs with high-k HfxZr1−xO2 (x=0.66,0.47,0.15) insulator layer
2014 · Hsien-Chin Chiu, Chia-Hsuan Wu, et al. · Microelectronics Reliability · 9
A Poly-Si Thin-Film Transistor with the In Situ Vacuum Gaps under the T-Shaped-Gated Electrode
2006 · Ta-Chuan Liao, Chun-Yu Wu, et al. · Electrochemical and Solid-State Letters · 9
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The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment
2016 · Hsien-Chin Chiu, Ji-Fan Chi, et al. · Microelectronics Reliability · 8
High-performance, micromachined GaN-on-Si high-electron-mobility transistor with backside diamondlike carbon/titanium heat-dissipation layer
2014 · Hsien-Chin Chiu, Chih-Wei Yang, et al. · Applied Physics Express · 8
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Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-κ ZrO2 Gate Insulator
2011 · Hsien-Chin Chiu, Hsiang-Chun Wang, et al. · Electrochemical and Solid-State Letters · 8
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Works count: 138
Citation count: 739
H-index: 14
I10-index: 20
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