Work

High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design

Year: 2012

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2012.05.006

Authors: Chao-Hung Chen, Hsien-Chin Chiu, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau

Institutions: Chang Gung University, Feng Chia University, National Chung Shan Institute of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Council, Chang Gung Medical Foundation

OpenAlex ID: W2052238693

FWCI: 1.744

Cites: 16

Cited by: 21

Related to: 10