Author

J. Levkoff

Observed name: Jerome Levkoff

Observed institutions: AT&T (United States), Core Competence

OpenAlex ID: A5071668064

The crystal geometry of AlxGa1-xAs grown by MOCVD on offcut GaAs (100) substrates

1990 · A. Leiberich, J. Levkoff · Journal of Crystal Growth · 30

A double crystal x-ray diffraction characterization of AlxGa1−xAs grown on an offcut GaAs(100) substrate

1990 · A. Leiberich, J. Levkoff · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 20

Precisely controlled compositional gradients in MBE grown AlGaAs/GaAs structures

1987 · J.P. Harbison, L.D. Peterson, et al. · Journal of Crystal Growth · 14

Effect of temperature on InGaAsP alloy composition

1995 · R. M. Lum, M. L. Mc Donald, et al. · Journal of Electronic Materials · 13

Transistor action in novel GaAs/W/GaAs structures

1986 · G. E. Derkits, J. P. Harbison, et al. · Applied Physics Letters · 13

Multiwavelength DFB laser array with integrated spot size converters

2000 · L.J.P. Ketelsen, J.A. Grenko, et al. · IEEE Journal of Quantum Electronics · 12

Selective area etching of InP with CBr4 in MOVPE

2006 · C. Ebert, J. Levkoff, et al. · Journal of Crystal Growth · 10

Lithographic fabrication of transmission electron microscopy cross sections in III–V materials

1986 · E. A. Dobisz, H. G. Craighead, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 10

Selective area etching of InP with PCl3 in MOVPE

2007 · C. Ebert, A. Bond, et al. · Journal of Crystal Growth · 6

Non-Destructive Optical Techniques for Characterizing Semiconductor Materials and Devices

1994 · Gary E. Carver, Mary L. Gray, et al. · AT&T Technical Journal · 4

Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

1985 · J. P. Harbison, D. M. Hwang, et al. · Applied Physics Letters · 4

Mocvd process modeling using in-situ reflectance test structure measurements for process control improvement

2005 · C. Ebert, A. Bond, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 1

Process control system for improved run-to-run control of molecular-beam epitaxial growth of GaAs/AlxGa1−xAs heterostructures

1993 · A. Robertson, J. Levkoff, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1

Ultra High Vacuum Processing: MBE

1988 · J. P. Harbison, P. F. Liao, et al. · Springer eBooks · 1

MOCVD PROCESS MODELING USING In-Situ REFLECTANCE IMPROVEMENT TEST STRUCTURE MEASUREMENTS FOR PROCESS CONTROL

2005 · Chris Ebert, A.E. Bond, et al.

SRPL mapping of semiconductor laser wafers

2002 · G.E. Carver, R.W. Heebner, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Impact of a Vicinal Growth Surface on AlAs / GaAs Superlattice Layer Thickness Measurements with Double Crystal X-ray Diffraction

1991 · A. Leiberich, J. Levkoff, et al. · MRS Proceedings

Double Crystal X-Ray Diffraction Measurement of a Triclinicly Distorted and Tilted AlxGa1-xAs Unit Cell Produced by Growth on Offcut GaAs Substrates

1989 · A. Leiberich, J. Levkoff · MRS Proceedings

Summary Abstract: I n s i t u grown semiconductor/metal/semiconductor structures: Molecular beam epitaxial growth of tungsten layers embedded in single-crystal GaAs

1986 · J. P. Harbison, D. M. Hwang, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Works count: 19

Citation count: 139

H-index: 8

I10-index: 8